Tube GaN FETs

Results: 7
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TO247-3L
Datasheet
673In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 55.7 A 41 mOhms - 20 V, + 20 V 4.8 V 24.5 nC - 55 C + 150 C 192 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TO247-4L
Datasheet
598In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 35 A 60 mOhms - 20 V, + 20 V 4.8 V 16 nC - 55 C + 150 C 132 W Enhancement SuperGaN
Renesas Electronics GaN FETs GAN FET 650V 95A TO2 47
Datasheet
401In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 95 A 18 mOhms - 20 V, + 20 V 4 V 68 nC - 55 C + 150 C 276 W Enhancement
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TO247-3L
Datasheet
768In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 34 A 60 mOhms - 20 V, + 20 V 4.8 V 24 nC - 55 C + 150 C 119 W Enhancement
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in TO220
Datasheet
835In Stock
Min.: 1
Mult.: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 13 A 180 mOhms - 20 V, + 20 V 4.8 V 8 nC - 55 C + 150 C 52 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 35mohm GaN FET in TO247-4L
Datasheet
Non-Stocked Lead-Time 26 Weeks
Min.: 1.200
Mult.: 1.200

Through Hole TO-247-4 N-Channel 1 Channel 650 V 46.5 A 41 mOhms - 20 V, + 20 V 3.6 V 42.7 nC - 55 C + 150 C 156 W Enhancement SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in TO220
Datasheet
Non-Stocked Lead-Time 14 Weeks
Min.: 1.000
Mult.: 1.000

SMD/SMT PQFN-8 N-Channel 1 Channel 700 V 312 mOhms 12 V 2.5 V 5.4 nC - 55 C + 150 C 31.2 W SuperGaN