TP70H300G4PS

Renesas Electronics
968-TP70H300G4PS
TP70H300G4PS

Mfr.:

Description:
GaN FETs 700V, 300mohm GaN FET in TO220

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
14 Weeks Estimated factory production time.
Minimum: 1000   Multiples: 1000
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
0,859 € 859,00 €
0,82 € 1.640,00 €

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
RoHS:  
SMD/SMT
PQFN-8
N-Channel
1 Channel
700 V
312 mOhms
12 V
2.5 V
5.4 nC
- 55 C
+ 150 C
31.2 W
SuperGaN
Brand: Renesas Electronics
Packaging: Tube
Product: FETs
Product Type: GaN FETs
Rise Time: 4.8 ns
Series: Gen IV SuperGaN
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: GaN
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 39.6 ns
Typical Turn-On Delay Time: 27.8 ns
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Attributes selected: 0

Datasheet

Compliance Codes
ECCN:
EAR99
Origin Classifications
Country of Origin:
Japan
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

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