TP65H150G4PS

Renesas Electronics
227-TP65H150G4PS
TP65H150G4PS

Mfr.:

Description:
GaN FETs 650V, 150mohm GaN FET in TO220

Datasheet:
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In Stock: 590

Stock:
590 Can Dispatch Immediately
Factory Lead Time:
14 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
4,21 € 4,21 €
2,18 € 21,80 €
1,98 € 198,00 €
1,63 € 815,00 €
1,51 € 1.510,00 €
1,46 € 2.920,00 €

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
RoHS:  
Through Hole
TO-220-3
N-Channel
1 Channel
650 V
13 A
180 mOhms
- 20 V, + 20 V
4.8 V
8 nC
- 55 C
+ 150 C
52 W
Enhancement
SuperGaN
Brand: Renesas Electronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 8 ns
Packaging: Tube
Product Type: GaN FETs
Rise Time: 5.2 ns
Series: Gen IV SuperGaN
Factory Pack Quantity: 1000
Subcategory: Transistors
Technology: GaN
Typical Turn-Off Delay Time: 48 ns
Typical Turn-On Delay Time: 37.8 ns
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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