TP65H030G4PWS

Renesas Electronics
227-TP65H030G4PWS
TP65H030G4PWS

Mfr.:

Description:
GaN FETs 650V, 30mohm GaN FET in TO247-3L

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
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Learn more about Renesas Electronics TP65H030G4PWS

In Stock: 1.305

Stock:
1.305 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
8,78 € 8,78 €
5,55 € 55,50 €
4,70 € 470,00 €
4,20 € 2.100,00 €

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
RoHS:  
Through Hole
TO-247-3
N-Channel
1 Channel
650 V
55.7 A
41 mOhms
- 20 V, + 20 V
4.8 V
24.5 nC
- 55 C
+ 150 C
192 W
Enhancement
SuperGaN
Brand: Renesas Electronics
Configuration: Single
Country of Assembly: CN
Country of Diffusion: JP
Country of Origin: CN
Fall Time: 8 ns
Packaging: Tube
Product: FETs
Product Type: GaN FETs
Rise Time: 6.8 ns
Series: Gen IV SuperGaN
Factory Pack Quantity: 960
Subcategory: Transistors
Technology: GaN
Transistor Type: 1 N-Channel
Type: GaN FET
Typical Turn-Off Delay Time: 89.2 ns
Typical Turn-On Delay Time: 40.8 ns
Products found:
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

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