+420 517070880

Part of the TTI Family of Specialists Contact Mouser (Czech Republic) +420 517070880 Feedback

Change Location

English

In Stock

RoHS

Mfr.	Mfr. No:	Qty	Ext Total

View Basket

It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

TP65H015G5WS

Name: Renesas Electronics TP65H015G5WS
Brand: Renesas Electronics
SKU: 227-TP65H015G5WS
Price: 18.98 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

227-TP65H015G5WS

Mfr. No:

TP65H015G5WS

Mfr.:

Renesas Electronics

Description:

GaN FETs GAN FET 650V 95A TO2 47

Datasheet:

TP65H015G5WS Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about Renesas Electronics TP65H015G5WS

In Stock: 330

Stock:: 330 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	18,98 €	18,98 €
	12,03 €	120,30 €
	11,47 €	1.147,00 €

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	95 A
Rds On - Drain-Source Resistance:	18 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	68 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	276 W
Channel Mode:	Enhancement
Brand:	Renesas Electronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	PH
Fall Time:	10 ns
Packaging:	Tube
Product Type:	GaN FETs
Rise Time:	20 ns
Factory Pack Quantity:	900
Subcategory:	Transistors
Technology:	GaN
Typical Turn-Off Delay Time:	132 ns
Typical Turn-On Delay Time:	78 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

TP65H015G5WS Datasheet (PDF)

This functionality requires JavaScript to be enabled.

CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

TP65H015G5WS SuperGaN® FET

Renesas Electronics TP65H015G5WS SuperGaN^® FET is a 650V, 15mΩ gallium nitride GaN normally-off FET that implements a Gen V SuperGaN platform. The platform employs advanced epi and patented design technologies. These Renesas TP65H015G5WS features simplify manufacturability while enhancing efficiency over silicon through a lower gate charge, output capacitance, crossover loss, and reverse recovery charge.