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TP65H050G4WS

Name: Renesas Electronics TP65H050G4WS
Brand: Renesas Electronics
SKU: 227-TP65H050G4WS
Price: 9.18 EUR
Availability: InStock

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Mouser No:

227-TP65H050G4WS

Mfr. No:

TP65H050G4WS

Mfr.:

Renesas Electronics

Description:

GaN FETs 650V, 50mohm GaN FET in TO247-3L

Datasheet:

TP65H050G4WS Datasheet (PDF)

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In Stock: 718

Stock:: 718 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	9,18 €	9,18 €
	5,84 €	58,40 €
	4,96 €	496,00 €
	4,47 €	4.023,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Renesas Electronics
Product Category:	GaN FETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	34 A
Rds On - Drain-Source Resistance:	60 mOhms
Vgs - Gate-Source Voltage:	- 20 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.8 V
Qg - Gate Charge:	24 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	119 W
Channel Mode:	Enhancement
Brand:	Renesas Electronics
Configuration:	Single
Fall Time:	10.9 ns
Packaging:	Tube
Product Type:	GaN FETs
Rise Time:	11.3 ns
Factory Pack Quantity:	900
Subcategory:	Transistors
Technology:	GaN
Typical Turn-Off Delay Time:	88.3 ns
Typical Turn-On Delay Time:	49.2 ns

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Datasheet

TP65H050G4WS Datasheet (PDF)

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Japan
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

650V 34A GaN FETs

Renesas Electronics 650V 34A GaN (Gallium Nitride) FETs are normally-off devices using Renesas Electronics's Gen IV platform. The FETs combine a high voltage GaN HEMT with a low voltage silicon MOSFET. The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge. GaN FETs have inherently superior performance over traditional silicon FETs, offering faster switching and better thermal performance.