Results: 24
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
IXYS SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO247-4L
Datasheet
80In Stock
450Expected 5/25/2026
Min.: 1
Mult.: 1
Reel: 450

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 65 A 52 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 375 W Enhancement
IXYS SiC MOSFETs 1200V 40mohm (65A a. 25C) SiC MOSFET in TO-263-7L
Datasheet
78In Stock
800Expected 5/25/2026
MouseReel Available
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT TO-263-7L N-Channel 1 Channel 1.2 kV 65 A 53 mOhms - 5 V, + 20 V 4.5 V 110 nC - 55 C + 175 C 417 W Enhancement
IXYS SiC MOSFETs TO247 1.7KV 4.4A N-CH SIC
Datasheet
1.867In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 1.7 kV 6.2 A 1 Ohms - 5 V, + 20 V 4 V 13 nC - 55 C + 175 C 60 W Enhancement
IXYS SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL
Datasheet
2.090In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2.000

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 111 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 600 W Enhancement
IXYS SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TO263-7L
Datasheet
900In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT TO-263-7L N-Channel 1 Channel 650 V 111 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 600 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO263
Datasheet
894In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 20 A 208 mOhms - 5 V, 20 V 4.5 V 29 nC - 55 C + 175 C 136 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO263-7L
Datasheet
900In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 43 A 78 mOhms - 5 V, 20 V 4.5 V 64 nC - 55 C + 175 C 174 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO263-7L
Datasheet
900In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TOLL
Datasheet
2.095In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2.000

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 43 A 78 mOhms - 5 V, 20 V 4.5 V 64 nC - 55 C + 175 C 174 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TOLL
Datasheet
2.100In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2.000

SMD/SMT TTOLL-8 N-Channel 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC MOSFETs 650V 25mohm (100A a. 25C) SiC MOSFET in TO247-4L
Datasheet
550In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 650 V 99 A 33 mOhms - 5 V, + 20 V 4.5 V 125 nC - 55 C + 175 C 454 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO247-4L
Datasheet
550In Stock
Min.: 1
Mult.: 1
Reel: 450

Through Hole TO-247-4 N-Channel 1 Channel 1.2 kV 20 A 208 mOhms - 5 V, 20 V 4.5 V 29 nC - 55 C + 175 C 136 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO247-4L HV
Datasheet
550In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 43 A 78 mOhms - 5 V, 20 V 4.5 V 64 nC - 55 C + 175 C 174 W Enhancement
IXYS SiC MOSFETs SiC MOSFET in TO247-4L HV
Datasheet
550In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 60 A 53 mOhms - 5 V, 20 V 4.5 V 94.7 nC - 55 C + 175 C 249 W Enhancement
IXYS SiC MOSFETs 1200V 62mohm (25A a. 25C) SiC MOSFET in isolated TO247-3L
Datasheet
400In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 28 A 81 mOhms - 4 V, + 21 V 4.8 V 52 nC - 40 C + 150 C 75.3 W Enhancement
IXYS SiC MOSFETs 1200V 36mohm (43A a. 25C) SiC MOSFET in isolated TO247-3L
Datasheet
478In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 45 A 47 mOhms - 4 V, + 21 V 4.8 V 79 nC - 40 C + 150 C 142 W Enhancement
IXYS SiC MOSFETs 1200V 18mOhm (30A at 25C) SiC MOSFET in isolated TO247-4L
Datasheet
290In Stock
100Expected 5/11/2026
Min.: 1
Mult.: 1

Through Hole ISO247-4 N-Channel 1 Channel 1.2 kV 46 A 47 mOhms 21 V 4.8 V 79 nC - 40 C + 150 C 143.7 W Enhancement
IXYS SiC MOSFETs 1200V 18mohm (30A a. 25C) SiC MOSFET in isolated TO247-3L
Datasheet
472In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3L N-Channel 1 Channel 1.2 kV 85 A 22.5 mOhms - 4 V, + 21 V 4.8 V 154 nC - 40 C + 150 C 266 W Enhancement
IXYS SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO267-7L
Datasheet
795In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT TO-263-7L N-Channel 1 Channel 1.2 kV 41 A 104 mOhms - 5 V, + 20 V 4.5 V 53 nC - 55 C + 175 C 250 W Enhancement
IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L
Datasheet
760In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT TO-263-7L N-Channel 1 Channel 1.2 kV 79 A 39 mOhms - 5 V, + 20 V 4.5 V 135 nC - 55 C + 175 C 395 W Enhancement
IXYS SiC MOSFETs 1200V 80mohm (40A a. 25C) SiC MOSFET in TO247-4L
Datasheet
408In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 41 A 104 mOhms - 5 V, + 20 V 4.5 V 53 nC - 55 C + 175 C 250 W Enhancement
IXYS SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO247-4L
Datasheet
392In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4L N-Channel 1 Channel 1.2 kV 79 A 39 mOhms - 5 V, + 20 V 135 nC - 55 C + 175 C 395 W Enhancement
IXYS SiC MOSFETs 1700V/750mohm SiC MOSFET TO-263-7L
Datasheet
63In Stock
Min.: 1
Mult.: 1

SMD/SMT D2PAK-7 (TO-263-7) N-Channel 1 Channel 1.7 kV 6.4 A 750 mOhms - 20 V, + 20 V 1.8 V 11 nC - 55 C + 175 C 65 W Enhancement
IXYS SiC MOSFETs 1200V 36mOhm (43A at 25C) SiC MOSFET in isolated TO247-4L
Datasheet
400On Order
Min.: 1
Mult.: 1

Through Hole ISO247-4 N-Channel 1 Channel 1.2 kV 85 A 23.4 mOhms 21 V 4.8 V 155 nC - 40 C + 150 C 223.2 W Enhancement