It appears you have JavaScript disabled within your browser. Some functions on this page will not work unless you log in.

See an Error?

IXSA20N120L2-7TR

Name: IXYS IXSA20N120L2-7TR
Brand: IXYS
SKU: 747-IXSA20N120L2-7TR
Price: 7.06 EUR
Availability: InStock

Images are for reference only
See Product Specifications

Mouser No:

747-IXSA20N120L2-7TR

Mfr. No:

IXSA20N120L2-7TR

Mfr.:

IXYS

Description:

SiC MOSFETs SiC MOSFET in TO263

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXSA20N120L2-7TR Datasheet (PDF)

ECAD Model:

Download the free Library Loader to convert this file for your ECAD Tool. Learn more about the ECAD Model.

More Information

Learn more about IXYS IXSA20N120L2-7TR

In Stock: 894

Stock:: 894 Can Dispatch Immediately

An unexpected error occurred. Please try again later.
Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 800)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	7,06 €	7,06 €
	4,72 €	47,20 €
	3,80 €	380,00 €
	3,38 €	1.690,00 €
Full Reel (Order in multiples of 800)
	2,98 €	2.384,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

.hidden-for-nojs { display: none; } .pull-right-nojs { justify-content: flex-end; }

Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	20 A
Rds On - Drain-Source Resistance:	208 mOhms
Vgs - Gate-Source Voltage:	- 5 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	29 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	136 W
Channel Mode:	Enhancement
Brand:	IXYS
Configuration:	Single
Fall Time:	13 ns
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Product:	SiC MOSFETS
Product Type:	SiC MOSFETS
Rise Time:	10.4 ns
Series:	IXSxNxL2Kx
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	7 ns
Typical Turn-On Delay Time:	2.4 ns

Products found:

To show similar products, select at least one checkbox

Select at least one checkbox above to show similar products in this category.

Attributes selected: 0

Filter Document:

Datasheet

IXSA20N120L2-7TR Datasheet (PDF)

This functionality requires JavaScript to be enabled.

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [R_DS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (I_D) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (V_DSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).