IXSG110N65L2K

IXYS
747-IXSG110N65L2K
IXSG110N65L2K

Mfr.:

Description:
SiC MOSFETs 650V 25mohm (110A a. 25C) SiC MOSFET in TOLL

Lifecycle:
New Product:
New from this manufacturer.
Datasheet:
ECAD Model:
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More Information
Learn more about IXYS IXSG110N65L2K

In Stock: 2.090

Stock:
2.090 Can Dispatch Immediately
Factory Lead Time:
27 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
Packaging:
Full Reel (Order in multiples of 2000)

Pricing (EUR)

Qty. Unit Price
Ext. Price
Cut Tape / MouseReel™ †
11,27 € 11,27 €
8,40 € 84,00 €
7,00 € 700,00 €
6,24 € 3.120,00 €
6,23 € 6.230,00 €
Full Reel (Order in multiples of 2000)
5,82 € 11.640,00 €
† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

Product Attribute Attribute Value Select Attribute
IXYS
Product Category: SiC MOSFETs
RoHS:  
SMD/SMT
TOLL-8
N-Channel
1 Channel
650 V
111 A
33 mOhms
- 5 V, + 20 V
4.5 V
125 nC
- 55 C
+ 175 C
600 W
Enhancement
Brand: IXYS
Configuration: Single
Fall Time: 11.5 ns
Packaging: Reel
Packaging: Cut Tape
Packaging: MouseReel
Product: MOSFETs
Product Type: SiC MOSFETS
Rise Time: 23.4 ns
Factory Pack Quantity: 2000
Subcategory: Transistors
Technology: SiC
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 35.1 ns
Typical Turn-On Delay Time: 13 ns
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Attributes selected: 0

Datasheet

Compliance Codes
TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99
Origin Classifications
Country of Origin:
China
Assembly Country of Origin:
Not available
Country of Diffusion:
Not available
The country is subject to change at the time of shipment.

IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs

IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs have high blocking voltage with low on-state resistance [RDS(ON)]. The on-state resistance is between 25mΩ and 160mΩ, and the continuous drain current (ID) is between 20A and 111A. These devices offer high-speed switching with low capacitance and have an ultra-fast intrinsic body diode. These are available with a 650V or 1200V drain-source voltage (VDSS) rating. The IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETs are offered in three packages (TO-263-7L, TOLL-8, and TO-247-4L).

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