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IXSA80N120L2-7TR

Name: IXYS IXSA80N120L2-7TR
Brand: IXYS
SKU: 747-IXSA80N120L2-7TR
Price: 12.69 EUR
Availability: InStock

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Mouser No:

747-IXSA80N120L2-7TR

Mfr. No:

IXSA80N120L2-7TR

Mfr.:

IXYS

Description:

SiC MOSFETs 1200V 30mohm (80A a. 25C) SiC MOSFET in TO267-7L

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IXSA80N120L2-7TR Datasheet (PDF)

ECAD Model:

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More Information

Learn more about IXYS IXSA80N120L2-7TR

In Stock: 760

Stock:: 760 Can Dispatch Immediately

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Factory Lead Time:: 27 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	12,69 €	12,69 €
	9,66 €	96,60 €
	7,18 €	718,00 €
	7,17 €	3.585,00 €
Full Reel (Order in multiples of 800)
	6,70 €	5.360,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	IXYS
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	SMD/SMT
Package/Case:	TO-263-7L
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	79 A
Rds On - Drain-Source Resistance:	39 mOhms
Vgs - Gate-Source Voltage:	- 5 V, + 20 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	135 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	395 W
Channel Mode:	Enhancement
Brand:	IXYS
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	13.6 ns
Packaging:	Reel
Packaging:	Cut Tape
Product:	MOSFETs
Product Type:	SiC MOSFETS
Rise Time:	24.6 ns
Series:	IXSA80N120L2-7
Factory Pack Quantity:	800
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Type:	SiC MOSFET
Typical Turn-Off Delay Time:	28.6 ns
Typical Turn-On Delay Time:	15.4 ns

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Datasheet

IXSA80N120L2-7TR Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

IXSA80N120L2-7 SiC MOSFET

IXYS IXSA80N120L2-7 SiC MOSFET is an industrial-grade, single-switch SiC MOSFET exhibiting power cycling characteristics and very fast, low-loss switching behavior. This MOSFET features low conduction losses, low gate drive power requirements, and low thermal management effort and is optimized for gate control. The IXSA80N120L2-7 SiC MOSFET is used for high-speed industrial switch-mode power supplies. This SiC MOSFET is ideal for solar inverters, switch-mode power supplies, UPS, motor drives, DC/DC converters, EV charging infrastructure, and induction heating.