650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.

Results: 29
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 19 mohm, 650 V, M2, TO-247-3L 1.292In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS D2PAK-7L 650V 1.263In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 106 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 395 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-3L 569In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 47 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 176 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 650V 776In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 38 A 85 mOhms - 8 V, + 22 V 4.3 V 61 nC - 55 C + 175 C 148 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, TO-247-4L 430In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 33 A 70 mOhms - 18 V, + 18 V 4.3 V 74 nC - 55 C + 175 C 88 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 32 mohm, 650 V, M2, TO-247-3L 1.824In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 66 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 291 W Enhancement EliteSiC
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, D2PAK-7L 3.923In Stock
Min.: 1
Mult.: 1
Reel: 800
SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 145 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 250 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 33 mohm, 650 V, M2, TO-247-4L 1.595In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 55 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 187 W Enhancement EliteSiC
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 31 mohm, 650 V, M2, D2PAK-7L 828In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 121 W Enhancement EliteSiC
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 31 mohm, 650V, M2, D2PAK-7L 428In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 62 A 50 mOhms - 8 V, + 22 V 4.3 V 105 nC - 55 C + 175 C 242 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS TO247-3L 23MOHM 650V M3S 3.720In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 40 A 18 mOhms - 8 V, + 22 V 4 V 262 nC - 55 C + 175 C 263 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS TO247-4L 32MOHM 650V M3S 399In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 187 W Enhancement
onsemi SiC MOSFETs SIC MOS D2PAK-7L 32MOHM 650V M3S 796In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 52 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi SiC MOSFETs SIC MOS TO247-4L 32MOHM 650V M3S 700In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 50 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 187 W Enhancement
onsemi SiC MOSFETs SIC MOS TO247-4L 650V 432In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 31 A 105 mOhms - 8 V, + 22 V 4.3 V 50 nC - 55 C + 175 C 129 W Enhancement EliteSiC
onsemi SiC MOSFETs SIC MOS TO247-3L 32MOHM 650V M3S 890In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 51 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi SiC MOSFETs SIC MOS D2PAK-7L 23MOHM 650V M3S 732In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 70 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 263 W Enhancement
onsemi SiC MOSFETs SIC MOS D2PAK-7L 32MOHM 650V M3S 800In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 52 A 44 mOhms - 8 V, + 22 V 4 V 55 nC - 55 C + 175 C 200 W Enhancement
onsemi SiC MOSFETs SIC MOS TO247-4L 23MOHM 650V M3S 411In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 67 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 245 W Enhancement
onsemi SiC MOSFETs SIC MOS TO247-3L 23MOHM 650V M3S 450In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 70 A 33 mOhms - 8 V, + 22 V 4 V 69 nC - 55 C + 175 C 263 W Enhancement
onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 44 mohm, 650 V, M2, D2PAK-7L 334In Stock
Min.: 1
Mult.: 1
Reel: 800

SMD/SMT D2PAK-7 N-Channel 1 Channel 650 V 46 A 70 mOhms - 8 V, + 22 V 4.3 V 74 nC - 55 C + 175 C 170 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 650V 158In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 99 A 28.5 mOhms - 8 V, + 22 V 4.3 V 164 nC - 55 C + 175 C 348 W Enhancement EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET - EliteSiC, 12 mohm, 650 V, M2, TO-247-3L 395In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 163 A 18 mOhms - 8 V, + 22 V 4.3 V 283 nC - 55 C + 175 C 643 W Enhancement EliteSiC

onsemi SiC MOSFETs SIC MOS TO247-4L 650V 874In Stock
Min.: 1
Mult.: 1
TO-247-4 EliteSiC

onsemi SiC MOSFETs Silicon Carbide (SiC) MOSFET, N-Channel - EliteSiC, 12 mohm, 650V, M2, TO247-4L 384In Stock
Min.: 1
Mult.: 1

TO-247-4 EliteSiC