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NTH4L032N065M3S

Name: onsemi NTH4L032N065M3S
Brand: onsemi
SKU: 863-NTH4L032N065M3S
Price: 8.97 EUR
Availability: InStock

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Mouser No:

863-NTH4L032N065M3S

Mfr. No:

NTH4L032N065M3S

Mfr.:

onsemi

Description:

SiC MOSFETs SIC MOS TO247-4L 32MOHM 650V M3S

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

NTH4L032N065M3S Datasheet

ECAD Model:

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In Stock: 679

Stock:: 679 Can Dispatch Immediately

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Factory Lead Time:: 19 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	8,97 €	8,97 €
	5,30 €	53,00 €
	4,48 €	537,60 €
	4,38 €	4.467,60 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	onsemi
Product Category:	SiC MOSFETs
RoHS:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	50 A
Rds On - Drain-Source Resistance:	44 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 22 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	55 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	187 W
Channel Mode:	Enhancement
Brand:	onsemi
Configuration:	Single
Fall Time:	9 ns
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	12 ns
Series:	NTH4L032N065M3S
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	8.8 ns

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Datasheet

NTH4L032N065M3S Datasheet

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: China
Country of Diffusion:: Korea, Republic of

The country is subject to change at the time of shipment.

650V Silicon Carbide (SiC) MOSFETs

onsemi 650V Silicon Carbide (SiC) MOSFETs provide superior switching performance and higher reliability compared to Silicon (Si). These 650V SiC MOSFETs have low ON resistance and a compact chip size to ensure low capacitance and gate charge. Benefits include high efficiency, fast operation frequency, increased power density, reduced EMI, and reduced system size.