Results: 48
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename
Renesas Electronics GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN 1.575In Stock
Min.: 1
Mult.: 1
: 4.000

SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 3.6 A 560 mOhms - 18 V, + 18 V 2.8 V 9 nC - 55 C + 150 C 13.2 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TOLL 355In Stock
Min.: 1
Mult.: 1
: 2.000

SMD/SMT TOLL-10 N-Channel 1 Channel 650 V 55.7 A 41 mOhms 4.8 V 24.5 nC - 55C + 150 C 192 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TOLT 1.237In Stock
Min.: 1
Mult.: 1
: 1.300

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 55.7 A 41 mOhms - 20 V, + 20 V 4.8 V 24.5 nC - 55 C + 150 C 192 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 30mohm GaN FET in TO247-3L 1.345In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-3 N-Channel 1 Channel 650 V 55.7 A 41 mOhms - 20 V, + 20 V 4.8 V 24.5 nC - 55 C + 150 C 192 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 100mohm GaN FET in TO220 750In Stock
Min.: 1
Mult.: 1
: 1.000

Through Hole TO-220-3 N-Channel 650 V 18.9 A 110 mOhms - 20 V, + 20 V 3.65 V 14.4 nC - 55 C + 150 C 65.8 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TO247-4L 560In Stock
Min.: 1
Mult.: 1

Through Hole TO-247-4 N-Channel 1 Channel 650 V 35 A 60 mOhms - 20 V, + 20 V 4.8 V 16 nC - 55 C + 150 C 132 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN 2.662In Stock
Min.: 1
Mult.: 1
: 3.000

SMD/SMT PQFN-3 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.8 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN 2.446In Stock
Min.: 1
Mult.: 1
: 3.000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.6 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TO220 1.001In Stock
Min.: 1
Mult.: 1
: 1.000

Through Hole TO-220-3 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.7 V 9 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TOLT 1.669In Stock
Min.: 1
Mult.: 1
: 1.300

SMD/SMT TOLT-16 N-Channel 1 Channel 650 V 29 A 85 mOhms - 20 V, + 20 V 4.8 V 9 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 480mohm GaN FET in 5x6 PQFN 3.769In Stock
Min.: 1
Mult.: 1
: 4.000

SMD/SMT QFN-7 N-Channel 1 Channel 650 V 3.6 A 560 mOhms - 10 V, + 10 V 2.8 V 5 nC - 55 C + 150 C 13.2 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 150mohm GaN FET in TO220 590In Stock
Min.: 1
Mult.: 1

Through Hole TO-220-3 N-Channel 1 Channel 650 V 13 A 180 mOhms - 20 V, + 20 V 4.8 V 8 nC - 55 C + 150 C 52 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 110mohm GaN BDS in TOLT
1.297Expected 9/18/2026
Min.: 1
Mult.: 1
: 1.300

SuperGaN
Renesas Electronics GaN FETs 650V, 35mohm GaN FET in TO247-4L Non-Stocked Lead-Time 26 Weeks
Min.: 1.200
Mult.: 1.200

Through Hole TO-247-4 N-Channel 1 Channel 650 V 46.5 A 41 mOhms - 20 V, + 20 V 3.6 V 42.7 nC - 55 C + 150 C 156 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 50mohm GaN FET in TOLL Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 34 A 60 mOhms - 20 V, + 20 V 4.8 V 16 nC - 55 C + 150 C 119 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 16 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

PQFN-8 650 V SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 16 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

PQFN-8 650 V SuperGaN
Renesas Electronics GaN FETs 650V, 70mohm GaN FET in TOLL Non-Stocked Lead-Time 16 Weeks
Min.: 2.000
Mult.: 2.000
: 2.000

SMD/SMT TOLL-8 N-Channel 1 Channel 650 V 29 A 60 mOhms - 20 V, + 20 V 4.8 V 8.4 nC - 55 C + 150 C 96 W Enhancement SuperGaN
Renesas Electronics GaN FETs 650V, 100mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 14 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

SMD/SMT PQFN-8 N-Channel 1 Channel 650 V 18.9 A 110 mOhms - 20 V, + 20 V 4.1 V 14.4 nC - 55 C + 150 C Enhancement SuperGaN
Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 14 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 150mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 14 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 5x6 PQFN Non-Stocked Lead-Time 14 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 300mohm GaN FET in 8x8 PQFN Non-Stocked Lead-Time 14 Weeks
Min.: 3.000
Mult.: 3.000
: 3.000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN Non-Stocked Lead-Time 14 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

700 V SuperGaN
Renesas Electronics GaN FETs 700V, 480mohm GaN FET in 5x6 PQFN Non-Stocked Lead-Time 14 Weeks
Min.: 5.000
Mult.: 5.000
: 5.000

700 V SuperGaN