TP65H070G4LSGB-TR

Renesas Electronics
227-TP65H070G4LSGBTR
TP65H070G4LSGB-TR

Mfr.:

Description:
GaN FETs 650V, 70mohm GaN FET in 8x8 PQFN

Datasheet:
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Learn more about Renesas Electronics TP65H070G4LSGB-TR

In Stock: 2.468

Stock:
2.468 Can Dispatch Immediately
Factory Lead Time:
16 Weeks Estimated factory production time for quantities greater than shown.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
6,73 € 6,73 €
4,57 € 45,70 €
3,50 € 350,00 €
Full Reel (Order in multiples of 3000)
2,98 € 8.940,00 €

Product Attribute Attribute Value Select Attribute
Renesas Electronics
Product Category: GaN FETs
RoHS:  
SMD/SMT
PQFN-8
N-Channel
1 Channel
650 V
29 A
85 mOhms
- 20 V, + 20 V
4.6 V
8.4 nC
- 55 C
+ 150 C
96 W
Enhancement
SuperGaN
Brand: Renesas Electronics
Configuration: Single
Country of Assembly: Not Available
Country of Diffusion: Not Available
Country of Origin: PH
Fall Time: 6.5 ns
Moisture Sensitive: Yes
Packaging: Reel
Packaging: Cut Tape
Product Type: GaN FETs
Rise Time: 9 ns
Series: Gen IV SuperGaN
Factory Pack Quantity: 3000
Subcategory: Transistors
Technology: GaN
Typical Turn-Off Delay Time: 71 ns
Typical Turn-On Delay Time: 27 ns
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Attributes selected: 0

Datasheet

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TARIC:
8541290000
CNHTS:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

TP65H070G4LSGB 650V SuperGaN® GaN FET

Renesas Electronics TP65H070G4LSGB 650V SuperGaN® Gallium Nitride (GaN) FET is a 650V, 70mΩ normally-off device offering superior quality and performance. TP65H070G4LSGB combines state-of-the-art high-voltage GaN HEMT and low-voltage silicon MOSFET technologies in an 8mm x 8mm PQFN package. Operating within a -55°C to +150°C temperature range, this component features 96W maximum power dissipation, an 18.4A to 29A maximum continuous drain current range, and a 120A pulsed drain current (maximum). The Gen IV SuperGaN® platform uses advanced epi and patented design technologies to simplify manufacturability while improving efficiency over silicon via lower gate charge, output capacitance, crossover loss, and reverse recovery charge.

Gen IV SuperGaN® FETs

Renesas Electronics Gen IV SuperGaN® FETs are normally off devices enabling AC-DC bridgeless totem-pole PFC designs. These FETs feature a high voltage GaN High Electron Mobility Transistor (HEMT) with a low voltage silicon MOSFET and offer superior reliability and performance. The Gen IV SuperGaN platform has advanced epi and patented design technologies that simplify manufacturability. This design technology improves efficiency over silicon with a low gate charge, output capacitance, crossover loss, and reverse recovery charge. Renesas Electronics Gen IV FETs are available in a variety of options for datacom, computing, lighting, automotive, and other applications.

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