EPC GaN FETs

Results: 56
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Channel Mode Tradename
EPC GaN FETs EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3 Non-Stocked Lead-Time 18 Weeks
Min.: 2.500
Mult.: 500
Reel: 500

SMD/SMT BGA-75 N-Channel 2 Channel 60 V 30 A 4.9 mOhms 6 V, - 4 V 2.5 V 8 nC, 11 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN Symetrical Half Bridge,100 V, 6.8 milliohm at 5 V, BGA 6.05 x 2.3 Non-Stocked Lead-Time 18 Weeks
Min.: 2.500
Mult.: 500
Reel: 500

SMD/SMT Die 2 Channel 100 V 30 A 6.8 mOhms 6 V, - 4 V 2.5 V 6.8 nC, 6.8 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN Dual FET, Common Source, 120 V, 110 milliohm at 5 V, BGA 1.35 x 1.35 Non-Stocked Lead-Time 18 Weeks
Min.: 12.500
Mult.: 2.500
Reel: 2.500

SMD/SMT BGA N - Channel 2 Channel 120 V 3.4 A 110 mOhms 6 V, - 4 V 2.5 V 0.8 nC - 40 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC AEC eGaN Dual FET,100 V, 58 milliohm at 5 V, BGA 1.35 x 1.35 Non-Stocked Lead-Time 18 Weeks
Min.: 12.500
Mult.: 2.500
Reel: 2.500

SMD/SMT BGA N - Channel 1 Channel 100 V 5 A 58 mOhms 6 V, - 4 V 2.5 V 0.85 nC - 55 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,160 V, 8 milliohm at 5 V, BGA 4.6 x 2.6 Non-Stocked Lead-Time 18 Weeks
Min.: 2.500
Mult.: 500
Reel: 500

SMD/SMT BGA N - Channel 1 Channel 160 V 48 A 8 mOhms - 4 V 2.5 V 11.1 nC - 55 C + 150 C Enhancement eGaN FET
EPC GaN FETs EPC eGaN FET,65 V, 480 milliohm at 5 V, LGA 2.05 x 0.85 Non-Stocked Lead-Time 18 Weeks
Min.: 12.500
Mult.: 2.500
Reel: 2.500

SMD/SMT LGA-6 N-Channel 1 Channel 65 V 2 A 480 mOhms 6 V, - 4 V 2.5 V 133 pC - 40 C + 150 C Enhancement eGaN FET