EPC2102

65-EPC2102
EPC2102

Mfr.:

Description:
GaN FETs EPC eGaN Symetrical Half Bridge,60 V, 4.9 milliohm at 5 V, BGA 6.05 x 2.3

Datasheet:
ECAD Model:
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Availability

Stock:
Non-Stocked
Factory Lead Time:
18 Weeks Estimated factory production time.
Minimum: 2500   Multiples: 500
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:
This Product Ships FREE

Pricing (EUR)

Qty. Unit Price
Ext. Price
Full Reel (Order in multiples of 500)
4,73 € 11.825,00 €

Product Attribute Attribute Value Select Attribute
EPC
Product Category: GaN FETs
RoHS:  
SMD/SMT
BGA-75
N-Channel
2 Channel
60 V
30 A
4.9 mOhms
6 V, - 4 V
2.5 V
8 nC, 11 nC
- 40 C
+ 150 C
Enhancement
eGaN FET
Brand: EPC
Packaging: Reel
Product: Power Transistor
Product Type: GaN FETs
Factory Pack Quantity: 500
Subcategory: Transistors
Technology: GaN
Transistor Type: 2 N-Channel
Type: Half Bridge
Unit Weight: 23 mg
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Attributes selected: 0

Datasheet

USHTS:
8541290040

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