TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.

Results: 12
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Packaging
Vishay Semiconductors MOSFETs TO252 400V 3.1A N-CH MOSFET
Datasheet
24.457In Stock
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 400 V 3.1 A 1.8 Ohms - 20 V, 20 V 2 V 20 nC - 55 C + 150 C 42 W Enhancement Reel, Cut Tape
Vishay Semiconductors MOSFETs TO252 200V 4.8A N-CH MOSFET
Datasheet
20.792In Stock
Min.: 1
Mult.: 1
: 2.000

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 200 V 4.8 A 800 mOhms - 20 V, 20 V 2 V 14 nC - 55 C + 150 C 42 W Enhancement Reel, Cut Tape
Vishay Semiconductors MOSFETs TO252 P-CH 60V 5.1A
Datasheet
7.881In Stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 5.1 A 500 mOhms - 20 V, 20 V 2 V 12 nC - 55 C + 150 C 25 W Enhancement Bulk
Vishay Semiconductors MOSFETs TO252 200V 3.6A P-CH MOSFET
Datasheet
7.833In Stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 200 V 3.6 A 1.5 Ohms - 20 V, 20 V 4 V 20 nC - 55 C + 150 C 42 W Enhancement Bulk
Vishay Semiconductors MOSFETs TO252 400V 3.1A N-CH MOSFET
Datasheet
8.639In Stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 400 V 3.1 A 1.8 Ohms - 20 V, 20 V 2 V 20 nC - 55 C + 150 C 42 W Enhancement Bulk
Vishay Semiconductors MOSFETs TO252 500V 2.4A N-CH MOSFET
Datasheet
8.798In Stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 500 V 2.4 A 3 Ohms - 20 V, 20 V 2 V 19 nC - 55 C + 150 C 42 W Enhancement Bulk
Vishay Semiconductors MOSFETs TO252 200V 4.8A N-CH MOSFET
Datasheet
8.741In Stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 200 V 4.8 A 800 mOhms - 20 V, 20 V 2 V 14 nC - 55 C + 150 C 42 W Enhancement Bulk
Vishay Semiconductors MOSFETs TO252 P-CH 60V 8.8A
Datasheet
8.491In Stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 60 V 8.8 A 280 mOhms - 20 V, 20 V 2 V 19 nC - 55 C + 150 C 42 W Enhancement Bulk
Vishay Semiconductors MOSFETs TO252 200V 1.9A P-CH MOSFET
Datasheet
8.940In Stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 200 V 1.9 A 3 Ohms - 20 V, 20 V 4 V 8.9 nC - 55 C + 150 C 25 W Enhancement Bulk
Vishay Semiconductors MOSFETs TO252 600V 2A N-CH MOSFET
Datasheet
8.749In Stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 600 V 2 A 4.4 Ohms - 20 V, 20 V 4 V 18 nC - 55 C + 150 C 42 W Enhancement Bulk
Vishay Semiconductors MOSFETs TO252 100V 4.3A N-CH MOSFET
Datasheet
5.540In Stock
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) N-Channel 1 Channel 100 V 4.3 A 540 mOhms - 10 V, 10 V 1 V 6.1 nC - 55 C + 150 C 25 W Enhancement Bulk
Vishay Semiconductors MOSFETs TO252 100V 5.6A P-CH MOSFET
Datasheet
2.992Expected 3/15/2027
Min.: 1
Mult.: 1

Si SMD/SMT DPAK-3 (TO-252-3) P-Channel 1 Channel 100 V 5.6 A 600 mOhms - 20 V, 20 V 2 V 18 nC - 55 C + 150 C 42 W Enhancement Bulk