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IRFR9014PBF-BE3

Name: Vishay IRFR9014PBF-BE3
Brand: Vishay Semiconductors
SKU: 78-IRFR9014PBF-BE3
Price: 1.78 EUR
Availability: InStock

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Mouser No:

78-IRFR9014PBF-BE3

Mfr. No:

IRFR9014PBF-BE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs TO252 P-CH 60V 5.1A

Datasheet:

IRFR9014PBF-BE3 Datasheet

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Learn more about Vishay Semiconductors IRFR9014PBF-BE3

In Stock: 7.986

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	1,78 €	1,78 €
	0,802 €	8,02 €
	0,722 €	72,20 €
	0,606 €	303,00 €
	0,517 €	517,00 €
	0,493 €	1.479,00 €
	0,491 €	2.946,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	P-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	60 V
Id - Continuous Drain Current:	5.1 A
Rds On - Drain-Source Resistance:	500 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2 V
Qg - Gate Charge:	12 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Packaging:	Bulk
Brand:	Vishay Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	31 ns
Forward Transconductance - Min:	1.4 S
Product Type:	MOSFETs
Rise Time:	63 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 P-Channel
Typical Turn-Off Delay Time:	9.6 ns
Typical Turn-On Delay Time:	11 ns

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Datasheet

IRFR9014PBF-BE3 Datasheet

Models

R-C Thermal Model Parameters

Technical Resources

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TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.