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IRFRC20PBF-BE3

Name: Vishay IRFRC20PBF-BE3
Brand: Vishay Semiconductors
SKU: 78-IRFRC20PBF-BE3
Price: 2.33 EUR
Availability: InStock

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Mouser No:

78-IRFRC20PBF-BE3

Mfr. No:

IRFRC20PBF-BE3

Mfr.:

Vishay Semiconductors

Description:

MOSFETs TO252 600V 2A N-CH MOSFET

Datasheet:

IRFRC20PBF-BE3 Datasheet

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In Stock: 8.749

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,33 €	2,33 €
	1,51 €	15,10 €
	1,03 €	103,00 €
	0,825 €	412,50 €
	0,765 €	765,00 €
	0,714 €	2.142,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Vishay
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DPAK-3 (TO-252-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	600 V
Id - Continuous Drain Current:	2 A
Rds On - Drain-Source Resistance:	4.4 Ohms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Qg - Gate Charge:	18 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	42 W
Channel Mode:	Enhancement
Packaging:	Bulk
Brand:	Vishay Semiconductors
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	TW
Fall Time:	25 ns
Forward Transconductance - Min:	1.4 S
Product Type:	MOSFETs
Rise Time:	23 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	23 ns
Typical Turn-On Delay Time:	10 ns

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Technical Resources

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET^® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK^® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.