IRFRC20PBF-BE3

Vishay Semiconductors
78-IRFRC20PBF-BE3
IRFRC20PBF-BE3

Mfr.:

Description:
MOSFETs TO252 600V 2A N-CH MOSFET

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In Stock: 8.749

Stock:
8.749 Can Dispatch Immediately
Quantities greater than 8749 will be subject to minimum order requirements.
Minimum: 1   Multiples: 1
Unit Price:
-,-- €
Ext. Price:
-,-- €
Est. Tariff:

Pricing (EUR)

Qty. Unit Price
Ext. Price
2,12 € 2,12 €
1,40 € 14,00 €
0,963 € 96,30 €
0,771 € 385,50 €
0,753 € 753,00 €
0,65 € 1.950,00 €

Product Attribute Attribute Value Select Attribute
Vishay
Product Category: MOSFETs
RoHS:  
REACH - SVHC:
Si
SMD/SMT
DPAK-3 (TO-252-3)
N-Channel
1 Channel
600 V
2 A
4.4 Ohms
- 20 V, 20 V
4 V
18 nC
- 55 C
+ 150 C
42 W
Enhancement
Bulk
Brand: Vishay Semiconductors
Fall Time: 25 ns
Forward Transconductance - Min: 1.4 S
Product Type: MOSFETs
Rise Time: 23 ns
Factory Pack Quantity: 3000
Subcategory: Transistors
Transistor Type: 1 N-Channel
Typical Turn-Off Delay Time: 23 ns
Typical Turn-On Delay Time: 10 ns
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TARIC:
8541290000
CAHTS:
8541290000
USHTS:
8541290065
JPHTS:
854129000
MXHTS:
8541299900
ECCN:
EAR99

TrenchFET® MOSFETs

Vishay / Siliconix TrenchFET® MOSFETs feature P- and N-channel silicon technology enabling these devices to provide excellent on-resistance specifications of 1.9mΩ in the PowerPAK® SO-8. Theses MOSFETs have on-resistance as low as half the level of the next best devices on the market. N-Channel MOSFETs offer a 40V to 250V drain-source breakdown voltage range, 375W power dissipation rating, and ThunderFET power depending on the model. The P-Channel MOSFETs feature up to 2 channels, SMD and through-hole mounting, and a 12V to 200V drain-source breakdown voltage range.