Toshiba SSM6L56FE Silicon P-/N-Channel MOSFETs
Toshiba SSM6L56FE Silicon P-/N-Channel MOSFETs are designed for high-speed switching. The Toshiba SSM6L56FE MOSFETs feature a 1.5V drive and low drain-source on-resistance.
Features
- 1.5V drive
- Low drain-source on-resistance
- Q1 N-channel
- RDS(ON) = 235mΩ (max) (@VGS = 4.5V, ID = 800mA)
- RDS(ON) = 300mΩ (max) (@VGS = 2.5V, ID = 600mA)
- RDS(ON) = 480mΩ (max) (@VGS = 1.8 V, ID = 200mA)
- RDS(ON) = 840mΩ (max) (@VGS = 1.5V, ID = 50mA)
- Q2 P-channel
- RDS(ON) = 390mΩ (max) (@VGS = -4.5V, ID = -800mA)
- RDS(ON) = 480mΩ (max) (@VGS = -2.5V, ID = -500mA)
- RDS(ON) = 660mΩ (max) (@VGS = -1.8V, ID = -200mA)
- RDS(ON) = 900mΩ (max) (@VGS = -1.5V, ID = -100mA)
- RDS(ON) = 4000mΩ (max) (@VGS = -1.2V, ID = -10mA)
Packaging and Internal Circuit
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Published: 2020-10-14
| Updated: 2024-11-25