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SSM6L56FE,LM

Name: Toshiba SSM6L56FE,LM
Brand: Toshiba
SKU: 757-SSM6L56FELM
Price: 0.3 EUR
Availability: InStock

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See Product Specifications

Mouser No:

757-SSM6L56FELM

Mfr. No:

SSM6L56FE,LM

Mfr.:

Toshiba

Description:

MOSFETs Small-signal MOSFET 2 in 1 Nch + Pch Vdss: 20V Id: 800mA Pd: 0.15W

Datasheet:

SSM6L56FE,LM Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Toshiba SSM6L56FE,LM

In Stock: 13.037

Stock:: 13.037

Can Dispatch Immediately

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On Order:: 4.000

Expected 5/29/2026
Factory Lead Time:: 13

Weeks Estimated factory production time for quantities greater than shown.

Enter Quantity:

Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

-,-- €

Est. Tariff:

Packaging:

Full Reel (Order in multiples of 4000)

Cut Tape

MouseReel™ (+5,00 €)

Pricing (EUR)

Qty.	Unit Price	Ext. Price
Cut Tape / MouseReel™ ^†
	0,301 €	0,30 €
	0,182 €	1,82 €
	0,114 €	11,40 €
	0,085 €	42,50 €
	0,075 €	75,00 €
	0,067 €	134,00 €
Full Reel (Order in multiples of 4000)
	0,053 €	212,00 €
	0,047 €	376,00 €
	0,046 €	1.104,00 €

† A MouseReel™ fee of 5,00 € will be added and calculated in your basket. All MouseReel™ orders are non-cancellable and non-returnable. ↩

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	ES-6
Transistor Polarity:	N-Channel, P-Channel
Number of Channels:	2 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	800 mA
Rds On - Drain-Source Resistance:	235 mOhms, 390 mOhms
Vgs - Gate-Source Voltage:	- 8 V, 8 V
Vgs th - Gate-Source Threshold Voltage:	1 V
Qg - Gate Charge:	1 nC, 1.6 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	150 mW
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Packaging:	MouseReel
Brand:	Toshiba
Forward Transconductance - Min:	1.4 S, 0.5 S
Product Type:	MOSFETs
Factory Pack Quantity:	4000
Subcategory:	Transistors
Transistor Type:	1 N-Channel, 1 P-Channel
Typical Turn-Off Delay Time:	8.5 ns, 26 ns
Typical Turn-On Delay Time:	5.5 ns, 8 ns
Unit Weight:	3 mg

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Datasheet

SSM6L56FE,LM Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Data

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541210000
USHTS:: 8541210095
ECCN:: EAR99

Origin Classifications

Country of Origin:: Thailand
Assembly Country of Origin:: Thailand
Country of Diffusion:: Japan

The country is subject to change at the time of shipment.

SSM6L56FE Silicon P-/N-Channel MOSFETs

Toshiba SSM6L56FE Silicon P-/N-Channel MOSFETs are designed for high-speed switching. The Toshiba SSM6L56FE MOSFETs feature a 1.5V drive and low drain-source on-resistance.

N-Channel/P-Channel Power MOSFETs

Toshiba N-Channel/P-Channel Power MOSFETs are low-drain-source MOSFETs available in three different packages (ES6, UDFN6, and TSOP6F). These dual-channel MOSFETs are available with drain-source voltages of 20V or 30V (N-channel) and -20V or -30V (P-channel). These Toshiba N-Channel/P-Channel Power MOSFETs are ideal for high-speed switching, power management switches, DC-DC converters, and motor drivers.