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Toshiba SSM6K51xNU Silicon N-Channel MOSFETs

Toshiba SSM6K51xNU Silicon N-Channel MOSFETs are part of Toshiba's extensive portfolio of MOSFETs in various circuit configurations and packages. The devices feature high speed, high performance, low loss, low on-resistance, small packaging, and more. The Toshiba SSM6K51xNU MOSFETs are ideal for power management switches and feature high-speed switching. These devices have a 1.5V drive with low drain-source on-resistance.

Features

  • SSM6K518NU
    • 1.5V drive
    • Low drain-source on-resistance
      • RDS(ON) = 33mΩ (max) (@VGS = 4.5V)
      • RDS(ON) = 45mΩ (max) (@VGS = 2.5V)
      • RDS(ON) = 74mΩ (max) (@VGS = 1.8V)
      • RDS(ON) = 108mΩ (max) (@VGS = 1.5V)
  • SSM6K516NU
    • 4.5V drive
    • Low drain-source on-resistance
      • RDS(ON) = 46mΩ (max) (@VGS = 10V)
      • RDS(ON) = 64mΩ (max) (@VGS = 4.5V)
  • SSM6K518NU
    • 1.8V drive
    • Low drain-source on-resistance
      • RDS(ON) = 39.1mΩ (max) (@VGS = 4.5V)
      • RDS(ON) = 53mΩ (max) (@VGS = 2.5V)
      • RDS(ON) = 82mΩ (max) (@VGS = 1.8V)

Applications

  • Power management switches
  • High-speed switching

Packaging and Pin Assignment

Toshiba SSM6K51xNU Silicon N-Channel MOSFETs

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View Results ( 3 ) Page
Part Number Datasheet Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Vds - Drain-Source Breakdown Voltage
SSM6K516NU,LF SSM6K516NU,LF Datasheet 46 mOhms - 12 V, 20 V 2.5 V 2.5 nC 30 V
SSM6K517NU,LF SSM6K517NU,LF Datasheet 39.1 mOhms - 8 V, 12 V 1 V 3.2 nC 30 V
SSM6K518NU,LF SSM6K518NU,LF Datasheet 108 mOhms - 8 V, 8 V 1 V 3.6 nC 20 V
Published: 2020-10-14 | Updated: 2024-11-22