New SiC MOSFETs
Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETs are engineered to meet the stringent demands of electric vehicle (EV) applications such as traction inverters, onboard chargers (OBC), and high-voltage DC/DC converters. These silicon carbide (SiC) MOSFETs deliver exceptional efficiency, power density, and thermal performance, enabling next-generation e-mobility systems. With a voltage rating of 750V and second-generation CoolSiC™ technology, these devices offer improved switching behavior and reduced losses compared to traditional silicon solutions. The portfolio includes a range of RDS(on) values from 9mΩ to 78mΩ, providing flexibility for designers to optimize conduction and switching performance.
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Infineon Technologies CoolSiC™ Automotive 750V G2 MOSFETsEngineered to meet the stringent demands of electric vehicle (EV) applications.19.12.2025
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onsemi NxT2023N065M3S EliteSiC MOSFETsFeature low effective output capacitance and ultra-low gate charge.04.12.2025 -
Central Semiconductor 1,700 V N-Channel Silicon Carbide (SiC) MOSFETsThese MOSFETS are designed for high-speed switching and fast reverse recovery applications.20.11.2025 -
ROHM Semiconductor 750V N-Channel SiC MOSFETsDevices boost switching frequency, decreasing the capacitors, reactors & other components required.17.10.2025 -
Infineon Technologies CoolSiC™ 1400V SiC G2 MOSFETsOffers improved thermal performance, increased power density, and enhanced reliability.09.10.2025 -
Microchip Technology 1200V SIC MOSFETsMOSFETs offer high efficiency in a lighter, more compact solution with fast switching speeds.25.09.2025 -
IXYS IXSxNxL2Kx Silicon Carbide (SiC) MOSFETsThese devices have a high blocking voltage with low on-state resistance [RDS(ON)].19.09.2025 -
IXYS IXSJxN120R1K 1200V SiC Power MOSFETsUp to 1200V blocking voltage with 18mΩ or 36mΩ low RDS(on).27.08.2025 -
ROHM Semiconductor SCT2H12NWB 1700V N-Channel SiC Power MOSFETA 1700V drain-source voltage (VDSS) and 3.9A continuous drain current (ID) rated SiC MOSFET.21.08.2025 -
onsemi NXVF6532M3TG01 650V EliteSiC H-Bridge Power MOSFETDelivers superior efficiency, fast switching, and robust thermal performance.08.08.2025 -
ROHM Semiconductor SCT40xKWA N-channel SiC power MOSFETsFeature 1200V VDS, low on-resistance, fast switching speed, and fast recovery time.14.07.2025 -
Littelfuse IXSJxN120R1 1,200 V SiC Power MOSFETsHigh-performance devices designed for demanding power conversion applications.23.06.2025 -
Infineon Technologies CoolSiC™ 750V G2 Silicon Carbide MOSFETsAutomotive and industrial qualified MOSFETs with an up to 78mΩ maximum drain-source on-resistance.03.06.2025 -
onsemi NVBG050N170M1 Silicon Carbide (SiC) MOSFETFeatures a maximum 76mΩ @ 20V maximum RDS(ON), and 1700V drain-to-source voltage.22.05.2025 -
APC-E Silicon Carbide (SiC) MOSFETsDelivers high power, high frequency, and unmatched performance for demanding applications.06.05.2025 -
Wolfspeed 1700V Silicon Carbide MOSFETsOffers higher switching, system efficiency, and power density for next-generation power conversion.17.04.2025 -
IXYS IXSA40N120L2-7 SiC MOSFETSingle-switch MOSFET that features 1200V, 80mΩ, 41A industrial-grade device in a TO263-7L package.06.03.2025 -
IXYS IXSA80N120L2-7 SiC MOSFETSingle-switch MOSFET that features 1200V, 30mΩ, 79A industrial-grade device in a TO263-7L package.06.03.2025 -
onsemi NVH4L050N170M1 Silicon Carbide (SiC) MOSFETsDeliver exceptional performance with a typical RDS(on) of 53mΩ at VGS = 20V.20.02.2025 -
onsemi NTBL032N065M3S Silicon Carbide (SiC) MOSFETsDesigned for fast switching applications, offering reliable performance.20.02.2025 -
Central Semiconductor CDMS24783-120 N-Channel SiC MOSFETOffers a 1200V drain-source voltage for high-speed switching and fast reverse recovery applications18.02.2025 -
IXYS IXSH40N120L2KHV SiC MOSFET1200V, 80mΩ, and 41A MOSFET, recommended for use in industrial switch mode power supplies.18.02.2025 -
IXYS IXSH80N120L2KHV SiC MOSFET1200V, 30mΩ, and 79A MOSFET, recommended for use in industrial switch mode power supplies.18.02.2025 -
SemiQ GEN3 1200V SiC MOSFET Discrete DevicesDeveloped to increase performance and cut switching losses in high-voltage applications.02.01.2025 -
Navitas Semiconductor 650V Gen-3 Fast (G3F) SiC MOSFETsIdeal for AI data center power supplies, EV charging, energy storage systems, and solar solutions.06.09.2024