Infineon Technologies IAUZ4xN06S5 60V Automotive OptiMOS™-5 MOSFETs
Infineon Technologies IAUZ4xN06S5 60V Automotive OptiMOS™-5 MOSFETs feature a low drain-source on-state resistance, a low gate charge, and a low gate capacitance, minimizing conduction and switching losses. These N-channel, enhancement-mode MOSFETs also feature an extremely low 22.7nC to 23.0nC reverse recovery charge.
The Infineon Technologies IAUZ4xN06S5 OptiMOS-5 MOSFETs are AEC-Q101 qualified for automotive applications. The 5.0mΩ IAUZ40N06S5 is available in a 3mm x 3mm S3O8 (PG-TSDSON-8) package. The 10.2mΩ IAUC41N06S5 is offered in a 5mm x 6mm Single SS08 (PG-TDSON-8) package.
Features
- OptiMOS power MOSFET for automotive applications
- N-channel, enhancement-mode, Logic Level devices
- Extended qualification beyond AEC-Q101
- Enhanced electrical testing
- Robust design
- MSL1 up to 260°C peak reflow
- 175°C maximum operating temperature
- Green product (RoHS compliant)
- 100% Avalanche tested
Applications
- General automotive applications
- DC-DC
- LED lighting
- Wireless charging
- ADAS
- CAV (24V) applications
Specifications
- 60V drain-source breakdown voltage (V(BR)DSS)
- Drain-source on-state resistance (RDS(on))
- IAUZ40N06S5: 5.0mΩ
- IAUC41N06S5: 10.2mΩ
- Continuous drain current (ID)
- IAUZ40N06S5: 90A
- IAUC41N06S5: 47A
- Gate source voltage (VGS)
- IAUZ40N06S5: ±16V
- IAUC41N06S5: ±20V
- Power dissipation
- IAUZ40N06S5: 71W
- IAUC41N06S5: 42W
- Reverse recovery charge (Qrr)
- IAUZ40N06S5: 23nC
- IAUC41N06S5: 22.7nC
- Package options
- IAUZ40N06S5: 3mm x 3mm S3O8 (PG-TSDSON-8)
- IAUC41N06S5: 5mm x 6mm Single SS08 (PG-TDSON-8)
Related Products
Infineon Technologies OptiMOS™ 5 Power MOSFETs
Designed to meet requirements for improved system efficiency while reducing system costs.
IAUZ40N06S5L050 Package Outline
IAUC41N06S5N102 Package Outline
Published: 2021-11-23
| Updated: 2022-03-11