Infineon Technologies OptiMOS™ 5 Power MOSFETs

Infineon OptiMOS™ 5 Power MOSFETs are designed to meet requirements for improved system efficiency while reducing system costs. These devices feature lower R_DS(on) and Figure of Merit (R_DS(on) x Q_g) compared to alternative devices. They are designed using silicon technology, optimized to meet and exceed the energy efficiency and power density requirements. Typical applications for these MOSFETs include server, datacom, and client applications in the computing industry. They can also be used in synchronous rectification in switched-mode power supplies (SMPS) and motor control, solar microinverters, and fast switching DC/DC converter applications.

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25V and 30V Power MOSFETs

Infineon OptiMOS™ 5 25V and 30V Power MOSFETs offer benchmark solutions by enabling the highest power density and energy efficiency, both in standby and full operation. These MOSFETs are based on silicon technology, optimized to meet and exceed the energy efficiency and power density requirements.

These are based on the tightened next-generation voltage regulation standards in DC/DC applications. OptiMOS™ 5 products address a broad range of voltage regulation applications in the computing industry. This includes server, datacom, and client applications while focusing on Intel's VR and IMVP platforms.

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Features

Best-in-Class on-state resistance
Benchmark switching performance (lowest Figure of Merits R_on x Q_gand R_on x Q_gd)
RoHS compliant and halogen-free
Optimized EMI behavior (integrated damping network)
Highest efficiency
Highest power density with S3O8 or Power Block package
Reduction of overall system costs
Operation at a high-switching frequency

Applications

Desktop and Server
Singlephase and Multiphase PoL
CPU/GPU Voltage regulation in Notebooks
High Power Density Voltage Regulator
Or-ing
E-fuse

System Efficiency

40V and 60V Power MOSFETs

Infineon OptiMOS™ 5 80V and 100V Power MOSFETs are specially designed for Synchronous Rectification in Telecom and Server Power Supplies. These devices can also be utilized in other industrial applications such as Solar, Low Voltage Drives, and Adapters.

Offered in seven different packages, the OptiMOS™ 5 80V and 100V MOSFETs provide low R_DS(on). One of the most significant contributors to this industry-leading FOM is the low on-state resistance with a value as low as 2.7mΩ in the Super SO-8 package, providing the highest level of power density and efficiency.

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Features

Optimized for Synchronous Rectification
Ideal for high switching frequency
Output capacitance improvement of up to 44%
R_DS(on) reduction of up to 43% from the previous generation
Highest system efficiency
Reduced switching and conduction losses
Less paralleling required
Increased power density
5V lower voltage overshoot

Applications

Telecom
Server
Solar
Low Voltage Drives
Light Electric Vehicles
Adapters

RDS(on) Comparisons

80V and 100V Power MOSFETs

Infineon OptiMOS™ 5 150V Power MOSFETs are suitable for low voltage drives like forklifts, e-scooters, telecom,and solar applications. The 150V MOSFETs offer an up to 25 percent reduction in R_DS(on) and Q_rr without compromising FOMgd. This reduces design effort and optimizes system efficiency. The ultralow reverse recovery charge (lowest Q_rr in SuperSO8 = 26nC) increases commutation ruggedness.

The OptiMOS 5 150V technology enables smaller best-in-class SuperSO8 (PQFN 5x6) package devices to replace TO-220 alternatives. The switch provides increased power density and lower voltage overshoot (VDS) due to reduced package inductance.

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Features

Lower R_DS(on) without compromising FOM_gd and FOM_OSS
Lower output charge
Ultralow reverse recovery charge
Increased commutation ruggedness
Higher switching frequency possible

Applications

Low voltages drives
Telecom
Solar

Performance Comparisons

150V Power MOSFETs

Infineon OptiMOS™ 5 150V Power MOSFETs are suitable for low voltage drives like forklifts, e-scooters, telecom, and solar applications. The 150V MOSFETs offer an up to 25 percent reduction in R_DS(on) and Q_rr without compromising FOMgd. This reduces design effort and optimizes system efficiency. The ultralow reverse recovery charge (lowest Q_rr in SuperSO8 = 26nC) increases commutation ruggedness.