IAUZ4xN06S5 60V Automotive OptiMOS™-5 MOSFETs

Infineon Technologies IAUZ4xN06S5 60V Automotive OptiMOS™-5 MOSFETs feature a low drain-source on-state resistance, a low gate charge, and a low gate capacitance, minimising conduction and switching losses. These N-channel, enhancement-mode  MOSFETs also feature an extremely low 22.7nC to 23.0nC reverse recovery charge. 

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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
Infineon Technologies MOSFETs MOSFET_)40V 60V)
Datasheet
4.057In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 5.000

Si SMD/SMT TDSON-8 N-Channel 1 Channel 60 V 41 A 10.2 mOhms - 20 V, 20 V 3.4 V 12.5 nC - 55 C + 175 C 42 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel
Infineon Technologies MOSFETs MOSFET_)40V 60V)
Datasheet
13.003In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 5.000

Si SMD/SMT TSDSON-8-33 N-Channel 1 Channel 60 V 40 A 5 mOhms - 16 V, 16 V 2.2 V 28 nC - 55 C + 175 C 71 W Enhancement AEC-Q101 OptiMOS Reel, Cut Tape, MouseReel