30V Single N-Channel Power MOSFETs

Taiwan Semiconductor 30V Single N-Channel Power MOSFETs feature a low RDS(ON) (drain-source on-state resistance), which minimizes conductive losses. These devices also feature a low gate charge for fast switching. These N-Channel Power MOSFETs are ideal for battery power management, load switching, motor control, and DC-DC converter applications.

Results: 3
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 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Packaging
Taiwan Semiconductor MOSFETs 30V, 90A, Single N-Channel Power MOSFET
Datasheet
2.489In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2.500

Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 90 A 5.2 mOhms - 20 V, 20 V 2.5 V 41 nC - 55 C + 175 C 83 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 30V, 194A, Single N-Channel Power MOSFET
Datasheet
826In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2.500

Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 194 A 1.8 mOhms - 20 V, 20 V 2.5 V 120 nC - 55 C + 175 C 136 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel
Taiwan Semiconductor MOSFETs 30V, 59A, Single N-Channel Power MOSFET
Datasheet
2.439In Stock
MouseReel Available
Min.: 1
Mult.: 1
Reel: 2.500

Si SMD/SMT PDFN-56-8 N-Channel 1 Channel 30 V 59 A 8 mOhms - 20 V, 20 V 2.5 V 20 nC - 55 C + 175 C 55.6 W Enhancement AEC-Q101 Reel, Cut Tape, MouseReel