Polar HiPerFET Power MOSFETs

IXYS Polar™ HiPerFETs Power MOSFETs combine the strengths of the Polar Standard family with a faster body diode. The faster body diode's reverse recovery time (trr) is reduced to make them suitable for phase-shift bridges motor control and uninterruptible power supply applications (UPS). This family of MOSFETs provides the lowest RDS(on), low RthJC, low Qg, and enhanced dv/dt capability.

Results: 10
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model Technology Mounting Style Package/Case Transistor Polarity Number of Channels Vds - Drain-Source Breakdown Voltage Id - Continuous Drain Current Rds On - Drain-Source Resistance Vgs - Gate-Source Voltage Vgs th - Gate-Source Threshold Voltage Qg - Gate Charge Minimum Operating Temperature Maximum Operating Temperature Pd - Power Dissipation Channel Mode Tradename Packaging
IXYS MOSFETs 10 Amps 800V 1.1 Rds 8.999In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 10 A 1.1 Ohms - 30 V, 30 V 3 V 40 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFETs Polar Power MOSFET HiPerFET 231In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 kV 5 A 2.8 Ohms - 30 V, 30 V 6 V 33.4 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs 4 Amps 1000V 798In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 4 A 3.3 Ohms - 20 V, 20 V 6 V 26 nC - 55 C + 150 C 150 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 10A 179In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 10 A 740 mOhms - 30 V, 30 V 3 V 32 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 12A 300In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 12 A 500 mOhms - 30 V, 30 V 5.5 V 29 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube
IXYS MOSFETs 600V 14A 306In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 600 V 14 A 550 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFETs POLAR HIPERFET WITH REDUCED RDS 1200V 6A 83In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1.2 kV 6 A 2.75 Ohms - 30 V, 30 V 5 V 92 nC - 55 C + 150 C 250 W Enhancement HiPerFET Tube
IXYS MOSFETs 7 Amps 1000V 181In Stock
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 1 kV 7 A 1.9 Ohms - 30 V, 30 V 6 V 47 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFETs 500V 16A Non-Stocked Lead-Time 27 Weeks
Min.: 300
Mult.: 50

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 500 V 16 A 400 mOhms - 30 V, 30 V 3 V 36 nC - 55 C + 150 C 300 W Enhancement HiPerFET Tube
IXYS MOSFETs 7 Amps 800V 1.44 Rds Non-Stocked Lead-Time 27 Weeks
Min.: 1
Mult.: 1

Si SMD/SMT D2PAK-3 (TO-263-3) N-Channel 1 Channel 800 V 7 A 1.4 Ohms - 30 V, 30 V 3 V 32 nC - 55 C + 150 C 200 W Enhancement HiPerFET Tube