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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 650V 60m 3rd Gen TO-263-7L
Datasheet
1.757In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 38 A 78 mOhms - 4 V, + 22 V 5.6 V 58 nC + 175 C 159 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 1200V 160m 3rd Gen TO-263-7L
Datasheet
1.915In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 17 A 208 mOhms - 4 V, + 22 V 5.6 V 42 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 1200V 40m 3rd Gen TO-263-7L
Datasheet
496In Stock
MouseReel Available
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 56 A 52 mOhms - 4 V, + 22 V 5.6 V 107 nC + 175 C 267 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 650V 120m 3rd Gen TO-263-7L
Datasheet
2.763In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 21 A 156 mOhms - 4 V, + 22 V 5.6 V 38 nC + 175 C 100 W Enhancement
ROHM Semiconductor SiC MOSFETs TO263 650V 70A N-CH SIC
Datasheet
978In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 70 A 39 mOhms - 4 V, + 22 V 5.6 V 104 nC + 175 C 267 W Enhancement
ROHM Semiconductor SiC MOSFETs TO263 1.2KV 30A N-CH SIC
Datasheet
369In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 30 A 104 mOhms - 4 V, + 22 V 5.6 V 60 nC + 175 C 159 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 650V 80m 3rd Gen TO-263-7L
Datasheet
855In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 650 V 29 A 104 mOhms - 4 V, + 22 V 5.6 V 48 nC + 175 C 125 W Enhancement
ROHM Semiconductor SiC MOSFETs Transistor SiC MOSFET 1200V 105m 3rd Gen TO-263-7L
Datasheet
766In Stock
Min.: 1
Mult.: 1
: 1.000

SMD/SMT TO-263-7 N-Channel 1 Channel 1.2 kV 23 A 137 mOhms - 4 V, + 22 V 5.6 V 51 nC + 175 C 125 W Enhancement