Toshiba U-MOSVIII MOSFETs
Toshiba U-MOSVIII MOSFETs combine low on-resistance and a low leakage current in a thin 3.3mm x 3.3mm x 0.9mm TSON Advance package. U-MOSVIII current ratings range from 43A to 100A, RDS(ON) (typical) from 3.5mΩ to 5.2mΩ, with an input capacitance from 1370pF to 2230pF (typical).
Features
- Logic-level gate drive
- N-channel polarity
- 3.5mΩ to 5.2 mΩ (@VGS = 10V) maximum drain-source on-resistance (RDS(ON))
- 30V drain-source voltage (VDSS)
- ±20V gate-source voltage (VGSS)
- 43A to 100A drain current (ID)
- 19W to 42W power dissipation (PD)
- 1370pF to 2230pF input capacitance (CISS)
- TSON Advance package type
Applications
- Lithium-ion secondary batteries
- Power management switches
Application Notes
- Bipolar Transistors: Electrical Characteristics
- Bipolar Transistors: Maximum Ratings
- Bipolar Transistors: Terms
- Bipolar Transistors: Thermal Stability and Design
- Calculating the Temperature of Discrete Semiconductor Devices
- Derating of the MOSFET Safe Operating Area
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 1
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 2
- Hints and Tips for Thermal Design for Discrete Semiconductor Devices: Part 3
- IGBTs (Insulated Gate Bipolar Transistors)
- Impacts of the dv/dt Rate on MOSFETs
- MOSFET Avalanche Ruggedness
- MOSFET Gate Drive Circuit
- MOSFET Paralleling (Parasitic Oscillation between Parallel Power MOSFETs)
- MOSFET Self-Turn-On Phenomenon
- Parasitic Oscillation and Ringing of Power MOSFETs
- Power MOSFETs: Maximum Ratings
Featured MOSFET
Toshiba TPN4R203NC U-MOS VIII MOSFET
Offers low drain source on-resistance of 3.5mΩ (typ.) at 10V and low leakage current of 10µA (max).
View Results ( 3 ) Page
| Part Number | Id - Continuous Drain Current | Rds On - Drain-Source Resistance | Qg - Gate Charge | Datasheet |
|---|---|---|---|---|
| TPN2R203NC,L1Q | 45 A | 1.8 mOhms | 34 nC |  |
| TPN4R203NC,L1Q | 53 A | 35 mOhms | 24 nC | |
| TPN6R303NC,LQ | 43 A | 5.2 mOhms | 24 nC | |
Published: 2019-10-01
| Updated: 2023-12-12