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TPN4R203NC,L1Q

Name: Toshiba TPN4R203NC,L1Q
Brand: Toshiba
SKU: 757-TPN4R203NCL1Q
Price: 0.41 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

757-TPN4R203NCL1Q

Mfr. No:

TPN4R203NC,L1Q

Mfr.:

Toshiba

Description:

MOSFETs U-MOSVIII-H 30V 53A 24nC MOSFET

Datasheet:

TPN4R203NC,L1Q Datasheet (PDF)

ECAD Model:

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Learn more about Toshiba TPN4R203NC,L1Q

Availability

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Minimum: 5000 Multiples: 5000

Unit Price:

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Ext. Price:

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Est. Tariff:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
Full Reel (Order in multiples of 5000)
	0,419 €	2.095,00 €
	0,404 €	4.040,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Toshiba
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	TSON-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	30 V
Id - Continuous Drain Current:	53 A
Rds On - Drain-Source Resistance:	35 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	2.3 V
Qg - Gate Charge:	24 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	22 W
Channel Mode:	Enhancement
Tradename:	U-MOSVIII
Packaging:	Reel
Brand:	Toshiba
Configuration:	Single
Fall Time:	14 ns
Product Type:	MOSFETs
Rise Time:	5 ns
Series:	TPN4R203NC
Factory Pack Quantity:	5000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	52 ns
Typical Turn-On Delay Time:	13 ns
Unit Weight:	20 mg

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Datasheet

TPN4R203NC,L1Q Datasheet (PDF)

Application Notes

Models

Product Catalogs

Test/Quality Data

Reliability Tests Report

Material Composition Data

Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 8541290100
KRHTS:: 8541299000
MXHTS:: 85412999
ECCN:: EAR99

Origin Classifications

Country of Origin:: Malaysia
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

TPN4R203NC U-MOS VIII MOSFET

Toshiba TPN4R203NC U-MOS VIII MOSFET is an N-channel device in a small, thin package. It features a low drain-source on-resistance of 3.5mΩ (typ.) at 10V and low leakage current of 10µA (max) at 30V. Toshiba TPN4R203NC U-MOS VIII MOSFET is ideally suited for use in Li-ion secondary batteries and power management switches.

U-MOSVIII MOSFETs

Toshiba U-MOSVIII MOSFETs combine low on-resistance and a low leakage current in a thin 3.3mm x 3.3mm x 0.9mm TSON Advance package. U-MOSVIII current ratings range from 43A to 100A, R_DS(ON) (typical) from 3.5mΩ to 5.2mΩ, with an input capacitance from 1370pF to 2230pF (typical).