ROHM Semiconductor RA1C030LD WLCSP MOSFET
ROHM Semiconductor RA1C030LD WLCSP MOSFET is an N-channel MOSFET designed with a low on-resistance and high power package. This device features a 20VDSS drain-source voltage, 3A continuous drain current, and 1W power dissipation. The RA1C030LD MOSFET offers 1.8V drive voltage, Electro-Static Discharge (ESD) protection up to 200V (MM), and up to 2kV (HBM). This MOSFET is suitable for switching circuits, single-cell battery applications, and mobile applications. The RA1C030LD MOSFET is Pb-free, halogen-free, and RoHS-compliant device.
Features
- 20VDSS drain-source voltage
- 3A continuous drain current
- Low on-resistance
- High-power small package
- Wafer Level Chip Size Package (WLCSP)
- ESD protection up to 200V (MM) and up to 2kV (HBM)
- N-channel and 3 terminal
- 1W power dissipation
- 1.8V drive voltage
- Pb-free lead plating
- RoHS compliant
- Halogen Free
Applications
- Switching circuits
- Single-cell battery
- Mobile
Inner Circuit
Dimensions
Package Comparison Diagram
Additional Resources
Published: 2022-11-10
| Updated: 2023-01-13