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RA1C030LDT5CL

Name: ROHM Semiconductor RA1C030LDT5CL
Brand: ROHM Semiconductor
SKU: 755-RA1C030LDT5CL
Price: 0.42 EUR
Availability: InStock

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Mouser No:

755-RA1C030LDT5CL

Mfr. No:

RA1C030LDT5CL

Mfr.:

ROHM Semiconductor

Description:

MOSFETs Transistor, MOSFET Nch, 20V(Vdss), 3.0A(Id), (2.5V Drive)

Datasheet:

RA1C030LDT5CL Datasheet

ECAD Model:

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More Information

Learn more about ROHM Semiconductor RA1C030LDT5CL

In Stock: 26.806

Stock:: 26.806 Can Dispatch Immediately

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Factory Lead Time:: 16 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,421 €	0,42 €
	0,335 €	3,35 €
	0,214 €	21,40 €
	0,162 €	81,00 €
	0,131 €	131,00 €
	0,116 €	580,00 €
	0,096 €	960,00 €
Full Reel (Order in multiples of 15000)
	0,095 €	1.425,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	ROHM Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	WLCSP-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	20 V
Id - Continuous Drain Current:	3 A
Rds On - Drain-Source Resistance:	140 mOhms
Vgs - Gate-Source Voltage:	- 200 mV, 7 V
Vgs th - Gate-Source Threshold Voltage:	1.5 V
Qg - Gate Charge:	1.5 nC
Minimum Operating Temperature:	- 50 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	1 W
Channel Mode:	Enhancement
Packaging:	Reel
Packaging:	Cut Tape
Brand:	ROHM Semiconductor
Configuration:	Single
Fall Time:	4 ns
Product Type:	MOSFETs
Rise Time:	6 ns
Factory Pack Quantity:	15000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	15 ns
Typical Turn-On Delay Time:	6 ns
Part # Aliases:	RA1C030LD

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Datasheet

RA1C030LDT5CL Datasheet

Specification Sheets

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
MXHTS:: 8541299900
ECCN:: EAR99

RA1C030LD WLCSP MOSFET

ROHM Semiconductor RA1C030LD WLCSP MOSFET is an N-channel MOSFET designed with a low on-resistance and high power package. This device features a 20V_DSS drain-source voltage, 3A continuous drain current, and 1W power dissipation. The RA1C030LD MOSFET offers 1.8V drive voltage, Electro-Static Discharge (ESD) protection up to 200V (MM), and up to 2kV (HBM). This MOSFET is suitable for switching circuits, single-cell battery applications, and mobile applications. The RA1C030LD MOSFET is Pb-free, halogen-free, and RoHS-compliant device.