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Qorvo QPD1000A GaN Input Matched Transistor

Qorvo QPD1000A GaN Input Matched Transistor is a 15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMT that operates from 30MHz to 1215MHz on a 28V supply rail. The integrated input-matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. It is ideally suited for basestation, radar, and communications applications and can support both CW and pulsed modes of operation. The Qorvo QPD1000A is housed in an industry-standard 6mm x 5mm surface mount DFN package.

Features

  • 30MHz to 1215MHz frequency range
  • 28V drain voltage
  • 24W at 1GHz, load pull data output power (P3dB)
  • 78% at 1GHz, load pull data PAE (P3dB)
  • Input matched to 50Ω
  • Low thermal resistance package
  • CW and pulse capable
  • 6mm x 5mm package

Applications

  • Military and civilian radar
  • Land mobile and military radio communications
  • Test instrumentation
  • Wideband or narrowband amplifiers
  • Jammers

Additional Resources

Functional Block Diagram

Block Diagram - Qorvo QPD1000A GaN Input Matched Transistor

Development Tool

Published: 2026-10-06 | Updated: 2026-10-14