QPD1000A GaN Input Matched Transistor

Qorvo QPD1000A GaN Input Matched Transistor is a 15W (P3dB), 50Ω input matched discrete GaN-on-SiC HEMT that operates from 30MHz to 1215MHz on a 28V supply rail. The integrated input-matching network enables wideband gain and power performance, while the output can be matched on board to optimize power and efficiency for any region within the band. It is ideally suited for basestation, radar, and communications applications and can support both CW and pulsed modes of operation. The Qorvo QPD1000A is housed in an industry-standard 6mm x 5mm surface mount DFN package.

Results: 2
Select Image Part # Mfr. Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity. Qty. RoHS ECAD Model
Qorvo GaN FETs 30 - 1215 MHz, 15 Watt, GaN RF Input-Matched Transistor
100Expected 12/18/2026
Cut Tape
89,49 €
74,50 €
71,34 €
Reel
68,72 €
Min.: 1
Mult.: 1
: 100
Qorvo GaN FETs 30 - 1215 MHz, 15 Watt, GaN RF Input-Matched Transistor Non-Stocked Lead-Time 12 Weeks
Reel
76,83 €
Min.: 750
Mult.: 750
: 750