onsemi Pairing Gate Drivers with EliteSiC MOSFETs
Energy Infrastructure applications like EV charging, energy storage, Uninterruptible Power Systems (UPS), and solar are pushing system power levels to hundreds of kilowatts and even megawatts. These high-power applications employ half bridge, full bridge, and 3-phase topologies duty cycling up to six switches for inverters and BLDC. Depending on the power level and switching speeds, system designers look to various switch technologies, including silicon, IGBTs, and SiC, to best fit application requirements.
While IGBTs offer superior thermal performance vs. silicon solutions in these high-power applications, EliteSiC by onsemi enables both higher switching speeds and high power. onsemi offers a complete portfolio of SiC MOSFETs ranging from 650V to 1700V breakdown voltage, with RDSONs as low as 12mΩ. But, every SiC MOSFET requires the correct Gate Driver to maximize system efficiencies and minimize the total power losses. This easy-to-use table below pairs the correct Gate Driver to each SiC MOSFET.
Applications
- EV charging
- Energy storage
- Uninterruptable power systems (UPS)
- Solar
Block Diagrams
Please click below to enlarge the block diagrams.
Videos
Featured Gate Drivers
onsemi NCP51561 5kVRMS Isolated Dual-Channel Gate Drivers
Isolated dual-channel gate drivers offering 4.5A/9A source and sink peak current respectively.
onsemi NCD5700 and NCD5701 IGBT Gate Drivers
High-current, high-performance IGBT Gate Drivers for high power applications.
onsemi NCV5700 High-Current IGBT Gate Driver
Features a high-current output of +4/-6A at IGBT Miller Plateu Voltages.
onsemi NCV51563 Isolated Dual Channel Gate Driver
Supports 4.5A source & 9A sink peak current for fast switching power switches.
onsemi NCD57000 & NCD57001 High Current IGBT Drivers
Single channel IGBT Drivers with internal galvanic isolation, ideal for high-power applications.
onsemi NCV57000 Isolated High Current IGBT Gate Driver
Designed for high system efficiency and reliability in high power applications.
onsemi NCD57001FDWR2G Isolated IGBT Gate Drivers
Single-channel IGBT driver with internal galvanic isolation designed for high system efficiency.
onsemi NCV57001 Isolated High Current IGBT Gate Drivers
Designed for high system efficiency and reliability in high power applications.
onsemi NCV57001F IGBT Gate Driver
Single-channel IGBT driver with internal galvanic isolation designed for high system efficiency.
onsemi NCD57090 & NCV57090 IGBT/MOSFET Gate Drivers
High-current, single-channel IGBT/MOSFET gate drivers with 5kVrms internal galvanic isolation.
onsemi NCx575x0 Isolated Dual Channel IGBT Gate Drivers
Features 5kVRMS internal galvanic isolation from input to each output.
onsemi NCx57091 IGBT/MOSFET Gate Drivers
High-current single-channel drivers with 5kVRMS internal galvanic isolation.
onsemi NCD57100 Gate Drivers
High-current single-channel IGBT drivers featuring internal galvanic isolation.
onsemi NCP51560 Isolated Dual-Channel Gate Driver
Offers a 4.5A peak source and a 9A peak sink output current capability.
onsemi NCP51563 Gate Drivers
Isolated drivers designed for fast switching to drive power MOSFETs and SiC MOSFET power switches.
onsemi NCV51561 Isolated Dual Channel Gate Driver
Features a 4.5A source and 9A sink peak current with short and matched propagation delays.
Featured EliteSiC MOSFETs
onsemi EliteSiC
Addresses the needs of demanding applications like solar inverters, and electric vehicle chargers.
onsemi 650V Silicon Carbide (SiC) MOSFETs
Provides superior switching performance and higher reliability compared to Silicon.
onsemi 900V EliteSiC (Silicon Carbide) MOSFETs
Provides superior switching performance and higher reliability compared to silicon.
onsemi 1200V EliteSiC (Silicon Carbide) MOSFETs
Provide superior switching performance and high reliability compared to silicon.
onsemi 1200V EliteSiC (Silicon Carbide) N-Channel MOSFETs
1200V, 80mΩ, high-speed switching, AEC-Q101 automotive qualified, and come in TO247-3L package.
onsemi NTBG028N170M1 1700V Silicon Carbide (SiC) MOSFET
Optimised for fast-switching applications.
onsemi NTBG060N065SC1 44mohm Silicon Carbide MOSFET
Housed in a D2PAK-7L package and designed to be fast and rugged.
onsemi NVBG020N120SC1 N-Channel Silicon Carbide MOSFETs
Use a technology that provides superior switching performance and higher reliability.
onsemi NVBG080N120SC1 1200V SiC MOSFET
Features high efficiency, fast operation frequency, increased power density, and reduced EMI.
onsemi NVBG160N120SC1 160mΩ SiC MOSFET
Offers 1200VDSS, 160mΩ maximum RDS(on), 19.5A maximum ID, and is AEC-Q101 qualified.
onsemi NTBL045N065SC1 33mohm Silicon Carbide MOSFET
Housed in a TOLL NTBL045N065SC1 package and designed to be fast and rugged.
onsemi NTH4L025N065SC1 19mohm Silicon Carbide MOSFET
Housed in a TO-247-4L package and designed to be fast and rugged.
onsemi NTH4L028N170M1 1700V EliteSiC MOSFET
Provides reliable, high-efficiency performance for energy and industrial drive applications.
onsemi NTH4L060N065SC1 Silicon Carbide (SiC) MOSFET
Provides superior switching performance and higher reliability.
onsemi NTH4L075N065SC1 57mohm Silicon Carbide MOSFET
Housed in a TO-247-4L package and designed to be fast and rugged.
onsemi NTHL025N065SC1 Silicon Carbide (SiC) MOSFET
Provides superior switching performance and higher reliability.
onsemi NTHL060N065SC1 Silicon Carbide (SiC) MOSFET
Provides superior switching performance and higher reliability.
onsemi NTHL080N120SC1A N-Channel SiC MOSFET
Offers superior switching performance, high reliability, and low ON resistance.
onsemi NTHL015N065SC1 12mohm Silicon Carbide MOSFETs
Housed in a TO-247-3L package and designed to be fast and rugged.
onsemi NVH4L015N065SC1 Silicon Carbide (SiC) MOSFETs
Provide superior switching performance and higher reliability than Silicon.
onsemi NVBG030N120M3S Silicon Carbide (SiC) MOSFET
AEC-Q101 qualified 1200V M3S planar EliteSiC MOSFET optimized for fast switching applications.
onsemi NVBG070N120M3S Silicon Carbide (SiC) MOSFET
1200V M3S planar EliteSiC MOSFET designed for fast switching applications.
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