Nexperia PSMN071-100NSE N-Channel ASFET
Nexperia PSMN071-100NSE N-Channel ASFET is designed for relay replacement, inrush management, and battery management applications. This ASFET includes an enhanced Safe Operating Area (SOA) for superior linear mode operation. The PSMN071-100NSE N-channel ASFET provides a low drain-source on-state resistance for low I2R conduction losses. This ASFET features a 100V maximum drain-source voltage, 9.8A maximum drain current, 31W maximum total power dissipation, and 175°C maximum junction temperature. The PSMN071-100NSE N-channel ASFET comes with enhanced SOA in a compact 2mm x 2mm DFN2020 package. In addition to those mentioned, other notable applications include IEEE802.3at and proprietary PoE solutions, WIFI® hotspots, 5G picocells, and CCTV.
Features
- Enhanced Safe Operating Area (SOA) for superior linear mode operation
- Low drain-source on-state resistance for low I2R conduction losses
- 2mm x 2mm space-saving DFN2020 package
- Very low drain leakage current
- EU/CN RoHS-compliant
Specifications
- 100V maximum drain-source voltage
- 9.8A maximum drain current
- 31W maximum total power dissipation
- 8A maximum non-repetitive avalanche current
- 175°C maximum junction temperature
- 260°C peak soldering temperature
Applications
- IEEE802.3at and proprietary PoE solutions
- Inrush management
- eFuse applications
- Battery management applications
- Relay replacement
- WIFI® hotspots
- 5G picocells
- CCTV
Package Outline
Published: 2024-02-21
| Updated: 2024-02-28