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PSMN071-100NSEX

Name: Nexperia PSMN071-100NSEX
Brand: Nexperia
SKU: 771-PSMN071-100NSEX
Price: 0.91 EUR
Availability: OutOfStock

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See Product Specifications

Mouser No:

771-PSMN071-100NSEX

Mfr. No:

PSMN071-100NSEX

Mfr.:

Nexperia

Description:

MOSFETs PSMN071-100NSE/SOT1220-2/DFN20

Datasheet:

PSMN071-100NSEX Datasheet (PDF)

ECAD Model:

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Availability

Stock:: 0

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On Order:: 2.994

Expected 6/7/2027
Factory Lead Time:: 26

Weeks Estimated factory production time for quantities greater than shown.

Long lead time reported on this product.

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Minimum: 1 Multiples: 1

Unit Price:

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Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	0,912 €	0,91 €
	0,631 €	6,31 €
	0,40 €	40,00 €
	0,248 €	124,00 €
	0,182 €	182,00 €
	0,163 €	489,00 €
	0,14 €	840,00 €
	0,123 €	1.107,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Nexperia
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	DFN-2020M-6
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	100 V
Id - Continuous Drain Current:	9.8 A
Rds On - Drain-Source Resistance:	82.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.6 V
Qg - Gate Charge:	6.5 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	31 W
Channel Mode:	Enhancement
Brand:	Nexperia
Configuration:	Single
Fall Time:	4.5 ns
Product Type:	MOSFETs
Rise Time:	2.6 ns
Factory Pack Quantity:	3000
Subcategory:	Transistors
Typical Turn-Off Delay Time:	5 ns
Typical Turn-On Delay Time:	3.8 ns
Part # Aliases:	934663731115

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Compliance Codes

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: China
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

PSMN071-100NSE N-Channel ASFET

Nexperia PSMN071-100NSE N-Channel ASFET is designed for relay replacement, inrush management, and battery management applications. This ASFET includes an enhanced Safe Operating Area (SOA) for superior linear mode operation. The PSMN071-100NSE N-channel ASFET provides a low drain-source on-state resistance for low I²R conduction losses. This ASFET features a 100V maximum drain-source voltage, 9.8A maximum drain current, 31W maximum total power dissipation, and 175°C maximum junction temperature. The PSMN071-100NSE N-channel ASFET comes with enhanced SOA in a compact 2mm x 2mm DFN2020 package. In addition to those mentioned, other notable applications include IEEE802.3at and proprietary PoE solutions, WIFI^® hotspots, 5G picocells, and CCTV.