Navitas Semiconductor 650V Bi-Directional GaNFast™ Power ICs

Navitas Semiconductor 650V Bi-Directional GaNFast™ Power ICs enable the transition from two-stage to single-stage topologies, providing high efficiency, power density, and performance while eliminating bulky capacitors and input inductors. These GaNFast power ICs function as two back-to-back GaN power switches, featuring monolithic, single-chip designs with two gate controls, a merged drain structure, and a patented, integrated, autonomous substrate clamp. A single high-speed, high-efficiency bi-directional GaNFast IC replaces up to four older switches, boosting system performance while lowering component count, system costs, and PC board space. Navitas Semiconductor 650V Bi-Directional GaNFast Power ICs are ideal for solar inverters, energy storage systems (ESS), motor drives, and electric vehicle (EV) charging applications.