iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET
iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET delivers ultra-low conduction and switching losses in a robust TO-220 package. This power MOSFET minimizes heat dissipation at both full and partial loads and features high Short-Circuit Withstand Capability (SCWC). The iS20M6R3S1P power MOSFET offers low switching losses, switching charge (QSW), and capacitive stored energy (EOSS). This power MOSFET is fully UIS‑tested and is RoHS compliant. Typical applications include motor control, boost converters, SMPS control FETs, and secondary side synchronous rectifiers.
Features
- Industry leading RDS(on) in TO-220 package
- High Short-Circuit Withstand Capability (SCWC)
- 100% UIS tested in production
- Low switching losses, QSW, and EOSS
- Easy parallelling with 0.5V gate threshold
Applications
- Motor control
- Boost converters and SMPS control FETs
- Secondary side synchronous rectifier
Specifications
- 200V (VDS) drain to source voltage
- 6.3mΩ RDS(on) drain to source on-resistance (maximum)
- 172A (ID) continuous drain current
- 105nC (QG) gate charge
- 8.3nC (QSW) switching charge
- 4μJ (EOSS) capacitive stored energy
Dimensional Diagram
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