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iS20M6R3S1P

Name: iDEAL Semiconductor iS20M6R3S1P
Brand: iDEAL Semiconductor
SKU: 25-IS20M6R3S1P
Price: 6.34 EUR
Availability: InStock

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See Product Specifications

Mouser No:

25-IS20M6R3S1P

Mfr. No:

iS20M6R3S1P

Mfr.:

iDEAL Semiconductor

Description:

MOSFETs N-CH 200V 172A TO-220

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

iS20M6R3S1P Datasheet (PDF)

ECAD Model:

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More Information

Learn more about iDEAL Semiconductor iS20M6R3S1P

In Stock: 960

Stock:: 960 Can Dispatch Immediately

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Factory Lead Time:: 12 Weeks Estimated factory production time for quantities greater than shown.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	6,34 €	6,34 €
	3,41 €	34,10 €
	3,13 €	313,00 €
	2,76 €	1.380,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	iDEAL Semiconductor
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	200 V
Id - Continuous Drain Current:	172 A
Rds On - Drain-Source Resistance:	6.3 mOhms
Vgs - Gate-Source Voltage:	- 20 V, 20 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	105 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	428 W
Channel Mode:	Enhancement
Packaging:	Tube
Brand:	iDEAL Semiconductor
Configuration:	Single
Fall Time:	7.1 ns
Forward Transconductance - Min:	47 S
Product Type:	MOSFETs
Rise Time:	5.1 ns
Factory Pack Quantity:	20
Subcategory:	Transistors
Transistor Type:	N-Channel
Typical Turn-Off Delay Time:	48.7 ns
Typical Turn-On Delay Time:	22.4 ns

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Datasheet

iS20M6R3S1P Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: United States
Assembly Country of Origin:: Not available
Country of Diffusion:: Not available

The country is subject to change at the time of shipment.

iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET

iDEAL Semiconductor iS20M6R3S1P SuperQ™ 200V N-Channel Power MOSFET delivers ultra-low conduction and switching losses in a robust TO-220 package. This power MOSFET minimizes heat dissipation at both full and partial loads and features high Short-Circuit Withstand Capability (SCWC). The iS20M6R3S1P power MOSFET offers low switching losses, switching charge (Q_SW), and capacitive stored energy (E_OSS). This power MOSFET is fully UIS‑tested and is RoHS compliant. Typical applications include motor control, boost converters, SMPS control FETs, and secondary side synchronous rectifiers.