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Diodes Incorporated DMWS120H100SM4 1200V N-Channel SiC Power MOSFET

Diodes Inc. DMWS120H100SM4 1200V N-Channel Silicon Carbide (SiC) Power MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance. It enables high density and efficiency in industrial motor drivers, photovoltaic energy systems, DC-DC converters, and power supplies for data centers and telecoms. This device’s low RDS(ON), coupled with a low Qg at a 15V gate drive of 52nC, enables system designers to maximize efficiency while ensuring minimal power dissipation. The Diodes Inc. DMWS120H100SM4 TO247-4 package includes an additional Kelvin-sensing pin in the fourth lead that connects to the source and provides the ability to optimize switching performance.

Features

  • Low on-resistance
  • High BVDSS rating for power applications
  • Low input capacitance
  • Lead free finish and RoHS compliant
  • Halogen and antimony free, green device

Materials

  • Package type is a TO247-4
  • Package material is molded plastic, Green molding compound
  • UL 94V-0 flammability classification rating 
  • Terminals are matte tin finish annealed over copper leadframe
  • 6.6g weight (approximate)

Applications

  • Datacenter and telecom power supplies
  • Industrial motor drives
  • DC-DC converters
  • Solar inverters
  • EV battery chargers

Videos

Maximum Ratings

Chart - Diodes Incorporated DMWS120H100SM4 1200V N-Channel SiC Power MOSFET

Typical Application

Application Circuit Diagram - Diodes Incorporated DMWS120H100SM4 1200V N-Channel SiC Power MOSFET
Published: 2023-05-12 | Updated: 2024-10-08