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DMWS120H100SM4

Name: Diodes Incorporated DMWS120H100SM4
Brand: Diodes Incorporated
SKU: 621-DMWS120H100SM4
Price: 17.39 EUR
Availability: InStock

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Mouser No:

621-DMWS120H100SM4

Mfr. No:

DMWS120H100SM4

Mfr.:

Diodes Incorporated

Description:

SiC MOSFETs SiC MOSFET BVDSS: >1000V TO247-4 TUBE 30PS

Datasheet:

DMWS120H100SM4 Datasheet (PDF)

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In Stock: 25

Stock:: 25 Can Dispatch Immediately

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Factory Lead Time:: 40 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	17,39 €	17,39 €
	11,71 €	117,10 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Diodes Incorporated
Product Category:	SiC MOSFETs
RoHS:
REACH - SVHC:
Mounting Style:	Through Hole
Package/Case:	TO-247-4
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.2 kV
Id - Continuous Drain Current:	37.2 A
Rds On - Drain-Source Resistance:	100 mOhms
Vgs - Gate-Source Voltage:	- 8 V, + 19 V
Vgs th - Gate-Source Threshold Voltage:	3.5 V
Qg - Gate Charge:	52 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	208 W
Channel Mode:	Enhancement
Brand:	Diodes Incorporated
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	5.03 ns
Forward Transconductance - Min:	3.8 S
Packaging:	Tube
Product Type:	SiC MOSFETS
Rise Time:	20.67 ns
Factory Pack Quantity:	30
Subcategory:	Transistors
Technology:	SiC
Typical Turn-Off Delay Time:	15.05 ns
Typical Turn-On Delay Time:	10.42 ns

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Datasheet

DMWS120H100SM4 Datasheet (PDF)

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TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

DMWS120H100SM4 1200V N-Channel SiC Power MOSFET

Diodes Inc. DMWS120H100SM4 1200V N-Channel Silicon Carbide (SiC) Power MOSFET is designed to minimize the on-state resistance yet maintain superior switching performance. It enables high density and efficiency in industrial motor drivers, photovoltaic energy systems, DC-DC converters, and power supplies for data centers and telecoms. This device’s low R_DS(ON), coupled with a low Q_g at a 15V gate drive of 52nC, enables system designers to maximize efficiency while ensuring minimal power dissipation. The Diodes Inc. DMWS120H100SM4 TO247-4 package includes an additional Kelvin-sensing pin in the fourth lead that connects to the source and provides the ability to optimize switching performance.