SiC N-Channel MOSFETs

Results: 22
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Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Qualification
Tradename
Packaging
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.333In Stock
Min.: 1
Mult.: 1
: 1.800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 144 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 429 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.530In Stock
Min.: 1
Mult.: 1
: 2.000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 144 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 429 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.620In Stock
Min.: 1
Mult.: 1
: 1.800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 111 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 341 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.260In Stock
Min.: 1
Mult.: 1
: 1.800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 50 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 167 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.260In Stock
Min.: 1
Mult.: 1
: 1.800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 43 A 56.2 mOhms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 150 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.791In Stock
Min.: 1
Mult.: 1
: 2.000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 111 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 341 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
1.787In Stock
Min.: 1
Mult.: 1
: 2.000

SiC SMD/SMT HSOF-8 N-Channel 1 Channel 440 V 68 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 214 W CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
150In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 104 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 341 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
199In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 94 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 273 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
316In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 65 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 195 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
240In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 99 A 19.1 mOhms - 7 V, 23 V 4.5 V 62 nC - 55 C + 175 C 273 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
202In Stock
3.600On Order
Min.: 1
Mult.: 1
: 1.800

SiC SMD/SMT HDSOP-16 N-Channel 1 Channel 400 V 68 A 32.1 mOhms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 214 W Enhancement CoolSiC Reel, Cut Tape
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
237In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 46 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 139 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
226In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 400 V 40 A 56.2 mOhms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 130 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
139In Stock
240Expected 6/11/2026
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 112 A 14.4 mOhms - 7 V, 23 V 4.5 V 85 nC - 55 C + 175 C 341 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
240In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 65 A 32.1 Ohms - 7 V, 23 V 4.5 V 36 nC - 55 C + 175 C 195 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
240In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 46 A 45.7 mOhms - 7 V, 23 V 4.5 V 26 nC - 55 C + 175 C 139 W Enhancement CoolSiC Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
240In Stock
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 400 V 40 A 56.2 Ohms - 7 V, 23 V 4.5 V 21 nC - 55 C + 175 C 130 W Enhancement CoolSiC Tube
Microchip Technology MOSFETs MOSFET SIC 1200 V 17 mOhm TO-247
Datasheet
11In Stock
90Expected 6/8/2026
Min.: 1
Mult.: 1

SiC Through Hole TO-247-3 N-Channel 1 Channel 1.2 kV 113 A 22 mOhms - 10 V, 23 V 2.7 V - 55 C + 175 C 455 W Tube
Infineon Technologies MOSFETs AUTOMOTIVE_SICMOS
Datasheet
220Expected 5/28/2026
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 750 V 163 A 10.6 mOhms - 5 V, 23 V 5.6 V 178 nC - 55 C + 175 C 517 W Enhancement AEC-Q101 CoolSiC Tube
IXYS MOSFETs 200V < 2mohm X4 n-channel MOSFET in SMPD -X
Datasheet
320On Order
Min.: 1
Mult.: 1

SiC SMD/SMT SMPD-24 N-Channel 1 Channel 200 V 480 A 1.99 mOhms - 20 V, 20 V 4.5 V 535 nC - 55 C + 175 C 1.07 kW Enhancement Tube
Infineon Technologies MOSFETs SILICON CARBIDE MOSFET
Datasheet
Lead-Time 52 Weeks
Min.: 1
Mult.: 1

SiC Through Hole TO-247-4 N-Channel 1 Channel 750 V 163 A 10.6 mOhms - 5 V, 23 V 5.6 V 178 nC - 55 C + 175 C 517 W Enhancement CoolSiC Tube