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IMT44R011M2HXTMA2

Name: Infineon IMT44R011M2HXTMA2
Brand: Infineon Technologies
SKU: 726-IMT44R011M2HXTMA
Price: 14.71 EUR
Availability: InStock

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Mouser No:

726-IMT44R011M2HXTMA

Mfr. No:

IMT44R011M2HXTMA2

Mfr.:

Infineon Technologies

Description:

MOSFETs SILICON CARBIDE MOSFET

Lifecycle:

New Product:

New from this manufacturer.

Datasheet:

IMT44R011M2HXTMA2 Datasheet (PDF)

ECAD Model:

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More Information

Learn more about Infineon Technologies IMT44R011M2HXTMA2

In Stock: 1.530

Stock:: 1.530 Can Dispatch Immediately

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Factory Lead Time:: 52 Weeks Estimated factory production time for quantities greater than shown.

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Minimum: 1 Multiples: 1

Unit Price:

-,-- €

Ext. Price:

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Est. Tariff:

Pricing (EUR)

Qty.	Unit Price	Ext. Price
	14,71 €	14,71 €
	10,41 €	104,10 €
	8,93 €	893,00 €
	8,34 €	8.340,00 €
Full Reel (Order in multiples of 2000)
	8,34 €	16.680,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	Infineon
Product Category:	MOSFETs
RoHS:
Technology:	SiC
Mounting Style:	SMD/SMT
Package/Case:	HSOF-8
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	440 V
Id - Continuous Drain Current:	144 A
Rds On - Drain-Source Resistance:	14.4 mOhms
Vgs - Gate-Source Voltage:	- 7 V, 23 V
Vgs th - Gate-Source Threshold Voltage:	4.5 V
Qg - Gate Charge:	85 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 175 C
Pd - Power Dissipation:	429 W
Channel Mode:	Enhancement
Tradename:	CoolSiC
Packaging:	Reel
Packaging:	Cut Tape
Brand:	Infineon Technologies
Configuration:	Single
Fall Time:	9.3 ns
Product Type:	MOSFETs
Rise Time:	18.3 ns
Factory Pack Quantity:	2000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	29.8 ns
Typical Turn-On Delay Time:	15.8 ns

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Datasheet

IMT44R011M2HXTMA2 Datasheet (PDF)

Compliance Codes

TARIC:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
MXHTS:: 8541299900
ECCN:: EAR99

Origin Classifications

Country of Origin:: Austria
Assembly Country of Origin:: Malaysia
Country of Diffusion:: Austria

The country is subject to change at the time of shipment.

CoolSiC™ 440V G2 Silicon Carbide MOSFETs

Infineon Technologies CoolSiC™ 440V G2 Silicon Carbide MOSFETs are designed to bridge the gap between 200V Si trench MOSFETs and 600V Si Super junction (SJ) MOSFETs. These MOSFETs deliver outstanding power density and system efficiency in 2 and 3-level using hard and soft-switching topologies. The CoolSiC™ MOSFETs feature 440V blocking voltage, 4.5V gate threshold voltage, and low R_DS(ON) temperature dependency. These MOSFETs combine high robustness with ultra-low switching losses and on-state resistance. Typical applications include power Artificial Intelligence (AI), high-power SMPS for server, datacenter, and telecom rectifiers.