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STP5N105K5

Name: STMicroelectronics STP5N105K5
Brand: STMicroelectronics
SKU: 511-STP5N105K5
Price: 2.79 EUR
Availability: InStock

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Mouser No:

511-STP5N105K5

Mfr. No:

STP5N105K5

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 1050 V, 2.9 Ohm typ., 3 A MDmesh K5 Power MOSFETs in TO-220 package

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Datasheet:

STP5N105K5 Datasheet (PDF)

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In Stock: 761

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,79 €	2,79 €
	1,45 €	14,50 €
	1,26 €	126,00 €
	1,08 €	540,00 €
	1,01 €	1.010,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Mounting Style:	Through Hole
Series:	STP5N105K5
Packaging:	Tube
Brand:	STMicroelectronics
Channel Mode:	Enhancement
Configuration:	Single
Fall Time:	24 ns
Id - Continuous Drain Current:	3 A
Maximum Operating Temperature:	+ 150 C
Minimum Operating Temperature:	- 55 C
Number of Channels:	1 Channel
Package/Case:	TO-220-3
Pd - Power Dissipation:	85 W
Product Type:	MOSFETs
Qg - Gate Charge:	12.5 nC
Rds On - Drain-Source Resistance:	3.5 Ohms
Rise Time:	8.5 ns
Factory Pack Quantity:	1000
Subcategory:	Transistors
Technology:	Si
Tradename:	MDmesh
Transistor Polarity:	N-Channel
Typical Turn-Off Delay Time:	31 ns
Typical Turn-On Delay Time:	15.5 ns
Vds - Drain-Source Breakdown Voltage:	1.05 kV
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	4 V
Unit Weight:	2 g

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Datasheet

STP5N105K5 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

MDmesh K5 Power MOSFETs

STMicroelectronics MDmesh K5 series are very-high voltage MOSFETs with super-junction, industry's best R_DS(on), and figure of merit for increased power density and efficiency. Typical applications include LED lighting, metering, solar inverters, 3-phase auxiliary power supplies, welding, and automotive battery management.

Latest Technologies in Power MOSFET & IGBT

STMicroelectronics offers the newest technologies in Power MOSFETs and IGBTs. ST offers a wide portfolio of MOSFETs and IGBTs tailored to specific applications, targeting SMPS, lighting, motor control, and varied industrial applications. ST's portfolio includes high-voltage super-junction MOSFETs, trench-gate field-stop IGBTs for hard and soft switched topologies, and low-voltage trench-based MOSFETs for power conversion and BLDC motor drives. ST's 1200V SiC MOSFETs combine a high junction temperature rating of 200°C with a very low R_DS(on) area (with minimal variation versus temperature) and excellent switching performance for more efficient and compact SMPS designs. M series IGBTs offer an optimized VCE(SAT) and E(off) tradeoff along with a rugged short circuit rating for motor control. Explore ST's complete offering of MOSFETs and IGBTs for any power design.