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STFU13N65M2

Name: STMicroelectronics STFU13N65M2
Brand: STMicroelectronics
SKU: 511-STFU13N65M2
Price: 2.05 EUR
Availability: InStock

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Mouser No:

511-STFU13N65M2

Mfr. No:

STFU13N65M2

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 650 V, 370 mOhm typ., 10 A MDmesh M2 Power MOSFET in a TO-220FP ultra

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Datasheet:

STFU13N65M2 Datasheet (PDF)

ECAD Model:

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In Stock: 936

Stock:: 936 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

Quantities greater than 936 will be subject to minimum order requirements.

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Ext. Price:

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	2,05 €	2,05 €
	1,01 €	10,10 €
	0,894 €	89,40 €
	0,719 €	359,50 €
	0,648 €	648,00 €
	0,639 €	1.278,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-220-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	650 V
Id - Continuous Drain Current:	10 A
Rds On - Drain-Source Resistance:	430 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	17 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	25 W
Channel Mode:	Enhancement
Tradename:	MDmesh
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	Not Available
Country of Diffusion:	Not Available
Country of Origin:	CN
Fall Time:	12 ns
Product Type:	MOSFETs
Rise Time:	7.8 ns
Series:	STFU13N65M2
Factory Pack Quantity:	1000
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	38 ns
Typical Turn-On Delay Time:	11 ns
Unit Weight:	2 g

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Datasheet

STFU13N65M2 Datasheet (PDF)

PCN

TARIC:: 8542399000
CNHTS:: 8541290000
CAHTS:: 8542390000
USHTS:: 8541290065
JPHTS:: 854239099
MXHTS:: 8542399901
ECCN:: EAR99

MDmesh™ II Power MOSFETs

STMicroelectronics 600 and 650V MDmesh™ M2 series of super-junction Power MOSFETs are optimized for soft-switching applications (LLC resonant power supplies) thanks to the optimized trade-off between R_DS(on), gate charge (Qg) and intrinsic capacitances (Ciss, Coss). They also are suitable for PFC applications, especially at light loads.