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STB47N50DM6AG

Name: STMicroelectronics STB47N50DM6AG
Brand: STMicroelectronics
SKU: 511-STB47N50DM6AG
Price: 5.61 EUR
Availability: InStock

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Mouser No:

511-STB47N50DM6AG

Mfr. No:

STB47N50DM6AG

Mfr.:

STMicroelectronics

Description:

MOSFETs Automotive-grade N-channel 500 V, 61 mOhm typ., 38 A MDmesh DM6 Power MOSFET in

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Datasheet:

STB47N50DM6AG Datasheet (PDF)

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In Stock: 995

Stock:: 995 Can Dispatch Immediately

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Factory Lead Time:: 14 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,61 €	5,61 €
	3,89 €	38,90 €
	2,86 €	286,00 €
Full Reel (Order in multiples of 1000)
	2,67 €	2.670,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
REACH - SVHC:
Technology:	Si
Mounting Style:	SMD/SMT
Package/Case:	D2PAK-3 (TO-263-3)
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	500 V
Id - Continuous Drain Current:	38 A
Rds On - Drain-Source Resistance:	71 mOhms
Vgs - Gate-Source Voltage:	- 25 V, 25 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	57 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	250 W
Channel Mode:	Enhancement
Qualification:	AEC-Q101
Tradename:	MDmesh
Packaging:	Reel
Packaging:	Cut Tape
Brand:	STMicroelectronics
Configuration:	Single
Product Type:	MOSFETs
Series:	STB47N50DM6AG
Factory Pack Quantity:	1000
Subcategory:	Transistors
Unit Weight:	4 g

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Datasheet

STB47N50DM6AG Datasheet (PDF)

EOL

Product Change Notification (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
USHTS:: 8541290065
ECCN:: EAR99

MDmesh DM6 N-channel Power MOSFETs

STMicroelectronics MDmesh DM6 N-channel Power MOSFETs are part of the MDmesh™ DM6 fast-recovery diodes. These automotive-grade N-channel power MOSFETs offer very low recovery charge (Q_rr) and recovery time (t_rr), combined with low R_DS(on). The DM6 power MOSFETs feature low gate charge, low input capacitance, low on-resistance, high dv/dt ruggedness, and Zener-protection. These power MOSFETs are suitable for the most demanding high-efficiency converters and ideal for bridge topologies and ZVS phase-shift converters.