STMicroelectronics MOSFETs

Results: 4
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 Mfr.
Description Datasheet Availability Pricing (EUR) Filter the results in the table by unit price based on your quantity.
Qty. RoHS ECAD Model Technology
Mounting Style
Package/Case
Transistor Polarity
Number of Channels
Vds - Drain-Source Breakdown Voltage
Id - Continuous Drain Current
Rds On - Drain-Source Resistance
Vgs - Gate-Source Voltage
Vgs th - Gate-Source Threshold Voltage
Qg - Gate Charge
Minimum Operating Temperature
Maximum Operating Temperature
Pd - Power Dissipation
Channel Mode
Tradename
Packaging
STMicroelectronics MOSFETs N-channel 600 V, 0.085 Ohm typ., 30 A MDmesh DM6 Power MOSFET in a TO-247 packag
Datasheet
357In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 30 A 99 mOhms - 25 V, 25 V 3.25 V 44 nC - 55 C + 150 C 210 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-247 package
Datasheet
1.190In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-3PF-3 N-Channel 1 Channel 1.7 kV 2.6 A 13 Ohms - 30 V, 30 V 3 V 44 nC - 55 C + 150 C 63 W Enhancement PowerMESH Tube
STMicroelectronics MOSFETs N-channel 600 V, 32 mOhm typ., 72 A MDmesh DM6 Power MOSFET in a TO-247 package
Datasheet
390In Stock
Min.: 1
Mult.: 1

Si Through Hole TO-247-3 N-Channel 1 Channel 600 V 72 A 36 mOhms - 25 V, 25 V 3.25 V 117 nC - 55 C + 150 C 446 W Enhancement MDmesh Tube
STMicroelectronics MOSFETs N-channel 650 V, 51 mOhm typ., 55 A MDmesh DM6 Power MOSFET in a TO-247 package
Datasheet
Non-Stocked Lead-Time 16 Weeks
Min.: 600
Mult.: 600

Si Through Hole TO-247-3 N-Channel 1 Channel 650 V 48 A 59 mOhms - 25 V, 25 V 4.75 V 80 nC - 55 C + 150 C 330 W Enhancement MDmesh Tube