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STW3N170

Name: STMicroelectronics STW3N170
Brand: STMicroelectronics
SKU: 511-STW3N170
Price: 5.19 EUR
Availability: InStock

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Mouser No:

511-STW3N170

Mfr. No:

STW3N170

Mfr.:

STMicroelectronics

Description:

MOSFETs N-channel 1700 V, 7 Ohm typ., 2.6 A, PowerMESH Power MOSFET in TO-247 package

Complete Your Design

Datasheet:

STW3N170 Datasheet (PDF)

ECAD Model:

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Learn more about STMicroelectronics STW3N170

In Stock: 1.190

Stock:: 1.190 Can Dispatch Immediately

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Factory Lead Time:: 18 Weeks Estimated factory production time for quantities greater than shown.

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Pricing (EUR)

Qty.	Unit Price	Ext. Price
	5,19 €	5,19 €
	3,05 €	30,50 €
	2,55 €	255,00 €
	2,43 €	1.458,00 €

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Product Attribute	Attribute Value	Select Attribute
Manufacturer:	STMicroelectronics
Product Category:	MOSFETs
RoHS:
Technology:	Si
Mounting Style:	Through Hole
Package/Case:	TO-3PF-3
Transistor Polarity:	N-Channel
Number of Channels:	1 Channel
Vds - Drain-Source Breakdown Voltage:	1.7 kV
Id - Continuous Drain Current:	2.6 A
Rds On - Drain-Source Resistance:	13 Ohms
Vgs - Gate-Source Voltage:	- 30 V, 30 V
Vgs th - Gate-Source Threshold Voltage:	3 V
Qg - Gate Charge:	44 nC
Minimum Operating Temperature:	- 55 C
Maximum Operating Temperature:	+ 150 C
Pd - Power Dissipation:	63 W
Channel Mode:	Enhancement
Tradename:	PowerMESH
Packaging:	Tube
Brand:	STMicroelectronics
Configuration:	Single
Country of Assembly:	SG
Country of Diffusion:	Not Available
Country of Origin:	SG
Fall Time:	53 ns
Product Type:	MOSFETs
Rise Time:	9 ns
Series:	STW3N170
Factory Pack Quantity:	600
Subcategory:	Transistors
Transistor Type:	1 N-Channel
Typical Turn-Off Delay Time:	51 ns
Typical Turn-On Delay Time:	25 ns
Unit Weight:	7 g

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Datasheet

STW3N170 Datasheet (PDF)

PCN

TARIC:: 8541290000
CNHTS:: 8541290000
CAHTS:: 8541290000
USHTS:: 8541290065
JPHTS:: 854129000
KRHTS:: 8541299000
MXHTS:: 8541299900
ECCN:: EAR99

N-Channel PowerMESH Power MOSFETs

STMicroelectronics N-Channel PowerMESH Power MOSFETs are designed with the STMicroelectronics consolidated strip-layout based MESH OVERLAY™ process. This process results in an advanced family of high voltage Power MOSFETs with outstanding performances. The strengthened layout coupled with the proprietary edge termination structure, gives the lowest R_DS(on) per area, unrivaled gate charge, and switching characteristics.